Tray MOSFETs

Results: 49
Select Image Part # Mfr. Description Datasheet Availability Pricing (SGD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
Microchip Technology MOSFETs N-CHANNEL DEPLETION MODE 20,623In Stock
Min.: 1
Mult.: 1

Si SMD/SMT DFN-8 N-Channel 2 Channel 250 V 1.1 A 3.5 Ohms - 20 V, 20 V 2.1 V 7.04 nC - 55 C + 150 C Depletion Tray
Renesas Electronics MOSFETs Nch Power MOSFET 60V 100A 4.6mohm TO-220 1,371In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 100 A 4.6 mOhms - 20 V, 20 V 133 nC - 55 C + 150 C 1.5 W Enhancement Tray
Renesas Electronics MOSFETs POWER TRS1 LV-MOS TO220FP MOS TRENCH D12 353In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 100 V 70 A 7.6 mOhms - 20 V, 20 V 4 V 94 nC + 150 C 30 W Enhancement Tray
Renesas Electronics MOSFETs POWER TRS1 LV-MOS TO220FP MOS TRENCH D12 649In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 100 V 50 A 11 mOhms - 20 V, 20 V 4 V 59 nC + 150 C 25 W Enhancement Tray
Renesas Electronics MOSFETs POWER TRS1 LV-MOS TO220FP 637In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 75 V 70 A 6.7 mOhms - 20 V, 20 V 4 V 56 nC + 150 C 25 W Enhancement Tray
Renesas Electronics MOSFETs POWER TRS1 LV-MOS TO220FP MOS TRENCH D12 362In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 100 V 80 A 5.5 mOhms - 20 V, 20 V 4 V 147 nC + 150 C 30 W Enhancement Tray
Toshiba MOSFETs PLN MOS 900V 1300m (VGS=10V) TO-3PN 2,986In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-3P N-Channel 1 Channel 900 V 9 A 1.3 Ohms - 30 V, 30 V 2.5 V 46 nC - 55 C + 150 C 250 W Enhancement MOSVIII Tray
Renesas Electronics MOSFETs POWER TRS1 HV-MOS TO220FP MOS AP5H POWER 775In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 5 A 1.6 Ohms - 30 V, 30 V 4.5 V 19 nC + 150 C 29 W Enhancement Tray
Renesas Electronics MOSFETs POWER TRS1 HV-MOS/IGBT 1,017In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 6 A 1.37 Ohms - 30 V, 30 V 4.5 V 20 nC + 150 C 125 W Enhancement Tray
Toshiba MOSFETs TO-3PN PD=165W 1MHz PWR MOSFET TRNS 6In Stock
100Expected 1/5/2026
Min.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 20 A 155 mOhms - 30 V, 30 V 3.7 V 48 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tray
Toshiba MOSFETs PLN MOS 900V 2000m (VGS=10V) TO-3PN 60In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 900 V 7 A 1.6 Ohms - 30 V, 30 V 4 V 32 nC - 55 C + 150 C 200 W Enhancement MOSVIII Tray
Renesas Electronics MOSFETs POWER TRS1 HV-MOS TO220FP MOS AP5H POWER 872In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 500 V 10 A 850 mOhms - 30 V, 30 V 5 V 23 nC + 150 C 29.5 W Enhancement Tray
Toshiba MOSFETs PLN MOS 800V 1000m (VGS=10V) TO-3PN 60In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 800 V 10 A 700 mOhms - 30 V, 30 V 4 V 46 nC - 55 C + 150 C 250 W Enhancement MOSVIII Tray
Toshiba MOSFETs TO-3PN PD=130W 1MHz PWR MOSFET TRNS 78In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 15.8 A 190 mOhms - 30 V, 30 V 3.7 V 38 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tray
Infineon Technologies F3L11MR12W2M1HPB19BPSA1
Infineon Technologies MOSFETs EASY 1In Stock
Min.: 1
Mult.: 1
Si Tray
Infineon Technologies FF11MR12W2M1HPB11BPSA1
Infineon Technologies MOSFETs CoolSiC MOSFET dual module 1200 V 15In Stock
Min.: 1
Mult.: 1
Si Tray
Infineon Technologies F417MR12W1M1HB76BPSA1
Infineon Technologies MOSFETs EASY 16In Stock
Min.: 1
Mult.: 1
Si Tray
Infineon Technologies F417MR12W1M1HPB76BPSA1
Infineon Technologies MOSFETs EASY
30Expected 10/6/2026
Min.: 1
Mult.: 1

Si Tray
Vishay / Siliconix MOSFETs TO247 N CHAN 700V 34A
355Expected 30/4/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247AD-3 N-Channel 2 Channel 700 V 34 A 109 mOhms - 30 V, 30 V 4 V 173 nC - 55 C + 175 C 375 W Enhancement TrenchFET Tray
Microchip Technology MOSFETs 6 PAIR N/P CHANNEL MOSFET Non-Stocked Lead-Time 4 Weeks
Min.: 1
Mult.: 1

Si SMD/SMT QFN-56 N-Channel, P-Channel 6 Channel 200 V 1.25 A, 3.2 A 9 Ohms, 10 Ohms 1 V, 2.4 V - 55 C + 150 C Enhancement Tray
Infineon Technologies DF225R12W2H3FB11BPSA1
Infineon Technologies MOSFETs EASY Non-Stocked Lead-Time 10 Weeks
Min.: 15
Mult.: 15

Si Tray
Infineon Technologies F433MR12W1M1HB76BPSA1
Infineon Technologies MOSFETs EASY Non-Stocked Lead-Time 8 Weeks
Min.: 1
Mult.: 1

Si Tray
Renesas Electronics RJK5012DPP-A0#T2
Renesas Electronics MOSFETs Nch Power MOSFET 500V 12A 620mohm TO-220F Non-Stocked Lead-Time 12 Weeks
Min.: 1
Mult.: 1

Tray
Renesas Electronics RJK5013DPP-A0#T2
Renesas Electronics MOSFETs Nch Power MOSFET 500V 14A 465mohm TO-220F Non-Stocked Lead-Time 12 Weeks
Min.: 1
Mult.: 1

Tray
Renesas Electronics RJK5014DPP-A0#T2
Renesas Electronics MOSFETs Nch Power MOSFET 500V 19A 390mohm TO-220F Non-Stocked Lead-Time 12 Weeks
Min.: 1
Mult.: 1

Tray