Vishay / Siliconix SiR870DP 100V N-Channel TrenchFET® Power MOSFET
Vishay / Siliconix SiR870DP 100V N-channel TrenchFET® Power MOSFET utilizes ThunderFET technology to provide a low on-resistance of 7.8mΩ at 4.5V. Additionally, the SiR870DP also offers a very low on-resistance of 6mΩ at 10V. These Vishay / Siliconix ThunderFET devices also provide a low 208 mΩ-nC figure of merit (FOM) at 4.5V. This low on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. SiR870DP 100V TrenchFET Power MOSFETs are designed for higher frequency and switching applications.
Features
- Low on-resistance of 7.8mΩ at 4.5V
- Very low on-resistance of 6mΩ at 10V
- Lower conduction losses and reduced power consumption for energy-saving green solutions
- Low 208mΩ-nC FOM at 4.5V
- PowerPAK SO-8 Package
- 100VDS (V)
- ±20VGS (V)
Applications
- Fixed telecom
- DC/DC converters
- Primary- and secondary-side switches
Package Dimensions
Related MOSFETs
Vishay / Siliconix ThunderFET® Power MOSFETs
Provides low values of on-resistance for 100V MOSFETs with 4.5V ratings.
Vishay / Siliconix Power MOSFETs
Low-to-high power MOSFETs that meet the increasing demands of applications in growth markets.
Published: 2011-08-01
| Updated: 2022-03-11