onsemi UJ3C SiC FETs
onsemi UJ3C SiC FETs are Silicon Carbide (SiC) FETs are based on a unique cascode configuration and optimized for soft-switching designs. The UJ3C SiC FETs are ideal for upgrading an existing silicon-based device or starting a SiC-based design. These devices integrate a SiC JFET with a custom-designed Si-MOSFET to produce the ideal combination of normally-OFF operation, high-performance body diode, and easy gate drive of the MOSFET with the efficiency, speed, and high-temperature rating of the SiC JFET. As a result, existing systems can expect a performance increase with lower conduction and switching losses, enhanced thermal properties, and integrated gate ESD protection.
In emerging designs, the UJ3C FETs deliver increased switching frequencies to gain substantial system benefits in both efficiency and reduction in size and cost of passive components, such as magnetics and capacitors.
The onsemi UJ3C SiC FETs are offered in industry-standard D2PAK-3L, TO-220-3L, and TO-247-3L packages. The majority of these devices are AEC-Q101 qualified for use in automotive applications.
Features
- 650V and 1200V options available
- Typical drain-source resistance from 27mΩ to 150mΩ (RDS(on))
- Maximum continuous drain current from 18.4A to 65A (ID)
- Excellent body diode performance (Vf<2V)
- Drive with any Si and/or SiC gate drive voltage
- Excellent reverse recovery
- Low gate charge
- Low intrinsic capacitance
- Integrated ESD and gate protection
- -55°C to +175°C operating and storage temperature (TJ, TSTG)
- D2PAK-3L, TO-220-3L, and TO-247-3L package options
- AEC-Q101 qualified options available
Applications
- EV charging
- PV inverters
- Switch-mode power supplies
- Power factor correction modules
- Motor drives
- Induction heating
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Published: 2021-04-28
| Updated: 2025-07-25