Back to Vishay

Vishay / Siliconix SiR662DP N-Ch 60V (D-S) MOSFETs

Vishay / Siliconix SiR662DP 60V N-Channel TrenchFET® Power MOSFET provides excellent on-resistance values. Vishay / Siliconix SiR662DP TrenchFET Power MOSFET also provides a gate charge figure of merit (FOM) for high efficiency. 

SiR662DP TrenchFET Power MOSFET provide lower conduction losses while also lowering switching losses, especially at higher frequency. It is designed for use in secondary side synchronous rectification in DC/DC and AC/DC converters, primary side switching in DC/DC converters, point-of-load modules, motor drives, bridge inverters, and mechanical relay replacement applications.

Features

  • VDS = 60V
  • Lowers conduction losses
  • Figure of merit (FOM) for high efficiency
  • Lowers switching losses, especially at higher frequency
  • On-resistance ratings down to VGS = 4.5V
  • PowerPAK® SO-8 Package

Applications

  • Primary side switch
  • POL
  • Synchronous rectifier
  • DC/DC converter
  • Amusement system
  • Industrial
  • LED backlighting

PowerPAK SO-8

Location Circuit - Vishay / Siliconix SiR662DP N-Ch 60V (D-S) MOSFETs
Published: 2011-08-19 | Updated: 2022-03-11