STMicroelectronics STP80N600K6 MDmesh K6 Power MOSFET

STMicroelectronics STP80N600K6 MDmesh K6 Power MOSFET offers a very high voltage, N-channel power solution utilizing the ultimate MDmesh K6 technology. This K6 technology is based on 20 years of STMicroelectronics experience in super junction technology. The result of this technology allows the STMicro STP80N600K6 to feature best-in-class on-resistance per area and gate charge for applications demanding superior power density and high efficiency.

Features

  • Worldwide best RDS(on) x area
  • Worldwide best FOM (figure of merit)
  • Ultra low gate charge
  • 100% avalanche tested
  • Zener-protected

Applications

  • Flyback converter
  • Adapters for tablets, notebook, and AIO
  • LED lighting

Specifications

  • 800V VDS
  • 600mΩ RDS(on) maximum
  • 7A ID

Typical Application

Application Circuit Diagram - STMicroelectronics STP80N600K6 MDmesh K6 Power MOSFET
Published: 2023-05-01 | Updated: 2024-06-25