ROHM Semiconductor Ultra-Low IR Schottky Barrier Diodes
ROHM Semiconductor Ultra-Low IR Schottky Barrier Diodes are silicon epitaxial planar-structured diodes with 175°C. These diodes feature a 200V repetitive peak reverse voltage, ultra-low reverse current, 200V reverse voltage, and high reliability. The ultra-low IR Schottky barrier diodes are used in switching power supply, freewheel diodes, and reverse polarity protection applications.
Features
- Silicon epitaxial planar structure
- 200V repetitive peak reverse voltage (Duty≤0.5)
- Ultra-low reverse current
- 200V reverse voltage
- High reliability
- 175°C junction temperature
Applications
- Switching power supply
- Freewheel diodes
- Reverse polarity protection
Normalized Transient Thermal Impedance from Junction to Case (Per Device)
.png "Performance Graph - ROHM Semiconductor Ultra-Low IR Schottky Barrier Diodes")
View Results ( 16 ) Page
| Part Number | Datasheet | If - Forward Current | Vr - Reverse Voltage | Vf - Forward Voltage | Vrrm - Repetitive Reverse Voltage | Ir - Reverse Current | Ifsm - Forward Surge Current | Maximum Operating Temperature |
|---|---|---|---|---|---|---|---|---|
| RB028RSM20STFTL1 |  |
12 A | 200 V | 840 mV | 200 V | 250 nA | 135 A | + 175 C |
| RB028RSM20STL1 | |
12 A | 200 V | 840 mV | 200 V | 250 nA | 135 A | + 175 C |
| RB038RSM20STFTL1 | |
4 A | 200 V | 790 mV | 200 V | 140 nA | 80 A | + 175 C |
| RB038RSM20STL1 | |
4 A | 200 V | 790 mV | 200 V | 140 nA | 80 A | + 175 C |
| RB048RSM20STFTL1 | |
8 A | 200 V | 830 mV | 200 V | 230 nA | 95 A | + 175 C |
| RB048RSM20STL1 | |
8 A | 200 V | 830 mV | 200 V | 230 nA | 95 A | + 175 C |
| RB078RSM20STFTL1 | |
5 A | 200 V | 810 mV | 200 V | 140 nA | 80 A | + 175 C |
| RB078RSM20STL1 | |
5 A | 200 V | 810 mV | 200 V | 140 nA | 80 A | + 175 C |
| RB088RSM20STFTL1 | |
10 A | 200 V | 830 mV | 200 V | 250 nA | 135 A | + 175 C |
| RB088RSM20STL1 | |
10 A | 200 V | 830 mV | 200 V | 250 nA | 135 A | + 175 C |
Published: 2025-06-16
| Updated: 2025-07-11