Back to onsemi

onsemi NTMFS5H663NL N-Channel Power MOSFET

onsemi NTMFS5H663NL N-Channel Power MOSFET offers low RDS(on), low QG, and low capacitance in a 5mm x 6mm compact design. This power MOSFET features a 60V drain-to-source voltage, ±20V gate-to-source voltage, 327A pulsed drain current, and a -55°C to 150°C operating junction and storage temperature range. The NTMFS5H663NL N-channel power MOSFET is Pb-free and RoHS-compliant. Typical applications include synchronous rectification, power supplies, motor drives, and motor control switches.

Features

  • Low RDS(on) to minimize conduction losses
  • Low QG and capacitance to minimize driver losses
  • 5mm x 6mm small footprint for compact design
  • Pb-free
  • RoHS compliant

Specifications

  • 60V drain-to-source voltage
  • ±20V gate-to-source voltage
  • 2V gate threshold voltage
  • 100nA gate-to-source leakage current
  • 5.6mV/°C threshold temperature coefficient
  • 64S forward transconductance
  • 1131pF input capacitance
  • 213pF output capacitance
  • 327A pulsed drain current
  • -55°C to 150°C operating junction and storage temperature range

Applications

  • Synchronous rectifications
  • Motor control switches
  • Power supplies
  • Motor drives

Typical Characteristics Graph

Performance Graph - onsemi NTMFS5H663NL N-Channel Power MOSFET
Published: 2023-12-19 | Updated: 2024-05-16