IXYS High Voltage Reverse Conducting (BiMOSFET™) IGBTs

IXYS Very High Voltage Series 2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs combine the strength of both MOSFETs and IGBTs. These high voltage devices feature a positive voltage temperature coefficient of both of its saturation voltage and the forward voltage drop of its intrinsic diode making them ideal for parallel operation. The “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device.


  • "Free" intrinsic body diode
  • High power density
  • High frequency operation
  • Low conduction losses
  • MOS gate turn on for drive simplicity
  • 4000V electrical isolation
  • Low gate drive requirements
  • Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices)
  • Easy to mount


  • Switched-mode and resonant-mode power supplies
  • Uninterruptible Power Supplies (UPS)
  • Laser and X-ray generators
  • Capacitor discharge circuits
  • High voltage pulser circuits
  • High voltage test equipment
  • AC switches
Published: 2019-08-27 | Updated: 2022-03-11