Infineon Technologies IGBT7 Discretes
Infineon Technologies IGBT7 Discretes are the 7th generation of TRENCHSTOP™ IGBTs, created with micro-pattern trench technology. The advanced technology delivers unparalleled control and performance, resulting in significant loss reduction, improved efficiency, and increased power density in applications.
650V and 1200V TRENCHSTOP™ IGBT7 H7
The advanced Infineon TRENCHSTOP IGBT7 H7 technology manages the increasing demand for green and efficient energy applications. It operates across diverse industries, including string inverters, energy storage systems (ESS), EV charging, and traditional industrial UPS and welding sectors.
The portfolio includes variants ranging from 40A to 150A, offered in 5 different package types: standard TO-247-3, TO-247-3 HCC, TO-247-4, TO-247-3 Plus, and TO-247-4 Plus. The TO-247-3 HCC variant of the TRENCHSTOP IGBT 7 H7 features high creepage clearance, further enhancing its suitability for various applications. For enhanced performance, consider the IKZA and IKY 4-pin packages, which not only reduce switching losses but also provide additional benefits such as lower voltage overshoot, minimized conduction losses, and the lowest reverse recovery loss. With these advancements, the TRENCHSTOP IGBT7 H7 simplifies your design and minimizes the need for device paralleling.
650V and 1200V TRENCHSTOP IGBT7 T7 and S7
Discover the TRENCHSTOP IGBT7 S7 and T7, a robust and reliable product family devised to cater to all industrial application needs, especially those requiring Short Circuit Withstand Time (SCWT). With cutting-edge technology and outstanding features, the IGBT7 S7 and T7 portfolio is the go-to choice for various industrial applications. The IGBT7 S7 and T7 are the best-in-class devices for industrial motor drives. With exceptional ease of use and reliability, it is the ideal solution for various applications, including UPS/PV and air conditioner PFC topologies.
The IGBT7 S7 and T7 devices are co-packed with ultra-soft, full-rated EC7 (emitter-controlled) diodes, delivering unmatched performance. The IGBT7 boasts extremely reduced IGBT saturation VCE(sat) and low Qrr, guaranteeing efficient and smooth operations.
The product portfolio covers a wide range of current ratings, starting from 20A and going up to 120A. Each IGBT is correctly matched with a full-rated freewheeling diode, guaranteeing optimal performance and seamless integration.
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Associated Products
Infineon Technologies EasyPACK™ TRENCHSTOP™ IGBT7 Modules
Based on micro-pattern trenches technology.
Infineon Technologies TRENCHSTOP™ IGBT7 Discretes & Modules
Delivers power density due to lower static losses and softer switching.
Infineon Technologies 1200V TRENCHSTOP IGBT7 H7 Discrete Transistors
7th generation of 1200V TRENCHSTOP™ IGBTs, designed with micro-pattern trench technology.
Infineon Technologies 650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors
Features advanced technology, meeting the demand for efficient energy applications.
Infineon Technologies IGBT7 E7 TRENCHSTOP™ Dual Configuration Modules
Based on micro-pattern trench technology that reduces losses and offers high controllability.
Infineon Technologies TRENCHSTOP™ IGBT7 S7
An extensive 1200V portfolio for industrial apps requiring short circuit capability/ruggedness.