IXYS 850V X-Class Power MOSFETs
IXYS 850V X-Class Power MOSFETs with HiPerFET™ body diodes are rugged devices with current ratings up to 110A, which enables a very high power density in high voltage power conversion applications. These 850V devices have very low on-state resistances (33mΩ in the SOT-227 package), along with low gate charges and superior dv/dt performance.
The MOSFETs' avalanche capability enhances their ruggedness, preventing device failure induced by voltage transients and accidental turn-on of parasitic bipolar transistors. With the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and EMI.
IXYS 850V X-Class Power MOSFETs are ideal for high-efficiency, high-power density applications such as switched-mode and resonant mode power supplies, AC and DC motor drives, DC-DC converters, robotic and servo control, electric vehicle battery chargers, renewable energy inverters, and power factor correction circuits.
Features
- International standard package, SOT-227-4
- miniBLOC with aluminum nitride isolation
- 2500V isolation voltage
- High current handling capability
- Fast intrinsic diode
- Avalanche-rated
- Low RDS(on)
- High power density
- Easy-to-mount
Applications
- Switch-mode and resonant-mode power supplies
- DC-DC converters
- PFC circuits
- AC and DC motor drives
- Robotics and servo controls
Specifications
- ±30V gate-source voltage
- 3.5V gate-source threshold voltage
- 850V drain-source breakdown voltage
- -55°C to +150°C operating temperature range
- 11ns fall time
- 25ns rise time
- 144ns typical turn-off delay time
- 50ns typical turn-on delay time
- 110A continuous drain current
- 1.17kW power dissipation
- 33mΩ drain-source resistance
Related MOSFETs
IXYS X-Class Power MOSFETs
Easy-to-mount high-power density N-Channel Enhancement Mode MOSFETs with a low RDS(ON) and QG.
Published: 2019-11-06
| Updated: 2023-12-12