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IS66WVH8M8BLL-100B1LI-TR

Name: ISSI IS66WVH8M8BLL-100B1LI-TR
Brand: ISSI
SKU: 870-WVH8M8BL100B1LIT
Price: 5.96 SGD
Availability: OutOfStock

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See Product Specifications

Mouser No:

870-WVH8M8BL100B1LIT

Mfr. No:

IS66WVH8M8BLL-100B1LI-TR

Mfr.:

ISSI

Description:

DRAM 64Mb, HyperRAM, 8Mbx8, 3.0V, 100MHz, 24-ball TFBGA, RoHS

Datasheet:

IS66WVH8M8BLL-100B1LI-TR Datasheet (PDF)

ECAD Model:

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More Information

Learn more about ISSI IS66WVH8M8BLL-100B1LI-TR

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ISSI
Product Category:	DRAM
RoHS:
Type:	HyperRAM
Package/Case:	FBGA-24
Series:	IS66WVH8M8BLL
Packaging:	Reel
Brand:	ISSI
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Product Type:	DRAM
Factory Pack Quantity:	2500
Subcategory:	Memory & Data Storage
Tradename:	HyperRAM

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Datasheet

IS66WVH8M8BLL-100B1LI-TR Datasheet (PDF)

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Compliance Codes

CNHTS:: 8542320000
CAHTS:: 8542320020
USHTS:: 8542320002
MXHTS:: 8542320299
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Not available
Country of Diffusion:: Taiwan

The country is subject to change at the time of shipment.

HYPERRAM™ Self-refresh DRAM

ISSI HYPERRAM™ Self-Refresh DRAMs are high-speed CMOS with a HYPERBUS™ interface. The HYPERBUS is a low signal count, Double Data Rate (DDR) interface that allows high-speed read and write throughput. These devices are available in KGD/KTD and 24-pin BGA packages with 32Mb, 64Mb, 128Mb, and 256Mb densities. Other features include hidden refresh operation and low power consumption. These memory devices are ideal for mobile and automotive applications.