HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Results: 719
Select Image Part # Mfr. Description Datasheet Availability Pricing (SGD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename Packaging
IXYS MOSFETs MOSFET 650V/150A Ultra Junction X2 31In Stock
Min.: 1
Mult.: 1

Si Through Hole PLUS-264-3 N-Channel 1 Channel 650 V 150 A 17 mOhms 30 V 2.7 V 430 nC - 55 C + 150 C 1.56 kW Enhancement HiPerFET Tube
IXYS MOSFETs 30 Amps 1200V 0.35 Rds 1In Stock
Min.: 1
Mult.: 1

Si Through Hole PLUS-264-3 N-Channel 1 Channel 1.2 kV 30 A 350 mOhms 30 V 6.5 V 310 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/44A 54In Stock
Min.: 1
Mult.: 1

Si Through Hole PLUS-264-3 N-Channel 1 Channel 1 kV 44 A 220 mOhms 30 V 3.5 V 264 nC - 55 C + 150 C 1.56 kW Enhancement HiPerFET Tube

IXYS MOSFETs 10 Amps 1000V 253In Stock
300Expected 27/10/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 10 A 1.4 Ohms 30 V 6.5 V 56 nC - 55 C + 150 C 380 W Enhancement HiPerFET Tube

IXYS MOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds 123In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 12 A 900 mOhms 30 V 6.5 V 56 nC - 55 C + 150 C 380 W Enhancement HiPerFET Tube

IXYS MOSFETs 175V 150A 17In Stock
300Expected 4/1/2027
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 175 V 150 A 12 mOhms 30 V 2.5 V 233 nC - 55 C + 175 C 880 W Enhancement HiPerFET Tube
IXYS MOSFETs TO247 300V 150A N-CH X3CLASS 9In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 150 A 8.3 mOhms 20 V 2.5 V 254 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube

IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/15A 58In Stock
300On Order
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 15 A 1.05 Ohms 30 V 6.5 V 64 nC - 55 C + 150 C 690 W Enhancement HiPerFET Tube

IXYS MOSFETs Polar3 HiPerFET Power MOSFET 208In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 16 A 360 mOhms 30 V 3 V 29 nC - 55 C + 150 C 330 W Enhancement HiPerFET Tube

IXYS MOSFETs 170 Amps 100V 0.009 Rds 95In Stock
300Expected 7/4/2027
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 170 A 9 mOhms 20 V 5 V 198 nC - 55 C + 175 C 714 W Enhancement HiPerFET Tube
IXYS MOSFETs TO247 200V 180A N-CH X3CLASS 9In Stock
300Expected 26/4/2027
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 180 A 7.5 mOhms 20 V 2.5 V 154 nC - 55 C + 150 C 735 W Enhancement HiPerFET Tube

IXYS MOSFETs Polar3 HiPerFET Power MOSFET 224In Stock
120Expected 28/10/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 20 A 300 mOhms 30 V 3 V 36 nC - 55 C + 150 C 380 W Enhancement HiPerFET Tube
IXYS MOSFETs TO247 200V 220A N-CH X3CLASS 5In Stock
300Expected 21/12/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 220 A 6.2 mOhms 20 V 2.5 V 204 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube

IXYS MOSFETs 600V 22A 0.36Ohm PolarP3 Power MOSFET 11In Stock
3,810Expected 16/2/2027
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 22 A 360 mOhms 30 V 5 V 38 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube

IXYS MOSFETs DIODE Id24 BVdass800 158In Stock
1,260On Order
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 24 A 400 mOhms 30 V 3 V 105 nC - 55 C + 150 C 650 W Enhancement HiPerFET Tube

IXYS MOSFETs 600V 28A 0.26Ohm PolarP3 Power MOSFET 29In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 28 A 260 mOhms 30 V 5 V 50 nC - 55 C + 150 C 695 W Enhancement HiPerFET Tube

IXYS MOSFETs 600V 36A 106In Stock
270Expected 11/1/2027
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 36 A 190 mOhms 30 V 3 V 102 nC - 55 C + 150 C 650 W Enhancement HiPerFET Tube

IXYS MOSFETs MOSFET 650V/46A Ultra Junction X2 150In Stock
300Expected 3/5/2027
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 46 A 76 mOhms 30 V 2.7 V 75 nC - 55 C + 150 C 660 W Enhancement HiPerFET Tube

IXYS MOSFETs 600V 50A 0.145Ohm PolarP3 Power MOSFET 191In Stock
300Expected 14/6/2027
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 50 A 145 mOhms 30 V 5 V 94 nC - 55 C + 150 C 1.04 mW Enhancement HiPerFET Tube
IXYS MOSFETs TO247 300V 56A N-CH X3CLASS 55In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 56 A 27 mOhms 20 V 2.5 V 56 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube

IXYS MOSFETs 69 Amps 300V 0.049 Rds 131In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 69 A 49 mOhms 20 V 5 V 156 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube

IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 200V/70A 60In Stock
240Expected 2/11/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 70 A 40 mOhms 30 V 3.5 V 67 nC - 55 C + 150 C 690 W Enhancement HiPerFET Tube

IXYS MOSFETs MOSFET 650V/80A Ultra Junction X2
1,650On Order
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 80 A 40 mOhms 30 V 2.7 V 143 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFETs TO247 500V 14A N-CH POLAR3 18In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 14 A 295 mOhms 30 V 3 V 42 nC - 55 C + 150 C 180 W Enhancement HiPerFET Tube
IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/24A 3In Stock
300Expected 24/11/2026
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 1 kV 24 A 440 mOhms 30 V 3.5 V 140 nC - 55 C + 150 C 1 kW Enhancement HiPerFET Tube