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NTBL045N065SC1

Name: onsemi NTBL045N065SC1
Brand: onsemi
SKU: 863-NTBL045N065SC1
Price: 18.52 SGD
Availability: OutOfStock

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Mouser No:

863-NTBL045N065SC1

Mfr. No:

NTBL045N065SC1

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS TOLL 650V

Datasheet:

NTBL045N065SC1 Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	SMD/SMT
Package/Case:	PSOF-8
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	73 A
Rds On - Drain-Source Resistance:	50 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	105 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	348 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Fall Time:	7 ns
Forward Transconductance - Min:	16 S
Packaging:	Reel
Packaging:	Cut Tape
Product Type:	SiC MOSFETS
Rise Time:	14 ns
Series:	NTBL045N065SC1
Factory Pack Quantity:	2000
Subcategory:	Transistors
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	26 ns
Typical Turn-On Delay Time:	13 ns

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Datasheet

NTBL045N065SC1 Datasheet (PDF)

PCN

Material Composition Disclosure

Compliance Codes

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: Philippines
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

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onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low R_DS(on), and high short circuit withstand time (SCWT).

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NTBL045N065SC1 33mohm Silicon Carbide MOSFET

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