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IMZA65R083M1HXKSA1

Name: Infineon IMZA65R083M1HXKSA1
Brand: Infineon Technologies
SKU: 726-IMZA65R083M1HXKS
Price: 6.39 SGD
Availability: Discontinued

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Mouser No:

726-IMZA65R083M1HXKS

Mfr. No:

IMZA65R083M1HXKSA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs SILICON CARBIDE MOSFET

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

IMZA65R083M1HXKSA1 Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	26 A
Rds On - Drain-Source Resistance:	111 mOhms
Vgs - Gate-Source Voltage:	- 5 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	5.7 V
Qg - Gate Charge:	19 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	104 W
Channel Mode:	Enhancement
Brand:	Infineon Technologies
Packaging:	Tube
Product Type:	SiC MOSFETS
Factory Pack Quantity:	240
Subcategory:	Transistors
Technology:	SiC
Part # Aliases:	IMZA65R083M1H SP005423798

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Datasheet

IMZA65R083M1HXKSA1 Datasheet (PDF)

Product Catalogs

Infineon's Latest Power and Sensing Guide (PDF)

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Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Austria
Assembly Country of Origin:: China
Country of Diffusion:: Austria

The country is subject to change at the time of shipment.

CoolSiC™ MOSFETs 650V

Infineon Technologies CoolSiC™ MOSFETs 650V combines the physical strength of silicon carbide with features amplifying device performance, reliability, and ease of use. With its state-of-the-art trench semiconductor process, the CoolSiC™ MOSFET delivers the lowest losses in the application and the highest reliability in operation. CoolSiC is the perfect fit for use in high-temperature and harsh environment applications.

650V CoolSiC™ M1 Trench Power MOSFETs

Infineon Technologies 650V CoolSiC™ M1 Trench Power MOSFETs combine the strong physical characteristics of Silicon Carbide with unique features that increase the device's performance, robustness, and ease of use. The CoolSiC M1 MOSFETs are built on a state-of-the-art trench semiconductor process optimized to deliver the lowest application losses and the highest reliability in operation. Suitable for high temperatures and harsh operations, these devices enable the simplified and cost-effective deployment of the highest system efficiency.