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TGA2624-SM

Name: Qorvo TGA2624-SM
Brand: Qorvo
SKU: 772-TGA2624-SM
Price: 391.03 SGD
Availability: OutOfStock

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See Product Specifications

Mouser No:

772-TGA2624-SM

Mfr. No:

TGA2624-SM

Mfr.:

Qorvo

Description:

RF Amplifier 9-10GHz 20W GaN PAE>40% SSG >34dB

Datasheet:

TGA2624-SM Datasheet (PDF)

ECAD Model:

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Shipping Alert:

This product may require additional documentation to export from the United States.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	RF Amplifier
Delivery Restrictions:	This product may require additional documentation to export from the United States.
RoHS:
Operating Frequency:	9 GHz to 10 GHz
Operating Supply Voltage:	20 V to 32 V
Operating Supply Current:	365 mA
Gain:	34 dB
Type:	Power Amplifiers
Mounting Style:	SMD/SMT
Package/Case:	QFN-22
Technology:	GaN SiC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Series:	TGA2624
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Qorvo
Development Kit:	TGA2624-SM EVB
Input Return Loss:	9 dB
Moisture Sensitive:	Yes
Number of Channels:	1 Channel
Pd - Power Dissipation:	44 W
Product Type:	RF Amplifier
Factory Pack Quantity:	250
Subcategory:	Wireless & RF Integrated Circuits
Part # Aliases:	TGA2624 TGA2624-SMTR7
Unit Weight:	15.350 g

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Datasheet

TGA2624-SM Datasheet (PDF)

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Compliance Codes

CNHTS:: 8542319090
CAHTS:: 8542330000
USHTS:: 8542330001
KRHTS:: 8532331000
TARIC:: 8542330000
MXHTS:: 8542330201
ECCN:: 3A001.b.2.b.2

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

GaN Power Amplifiers

Qorvo GaN Power Amplifiers allow unique, cost-effective solutions across a variety of applications. With these high-power amplifiers designed for military, commercial, satellite communications and radar systems, Qorvo offers GaN-based products meeting today's market needs and future requirements.

T1GA26xx-SM Low Noise Amplifiers

Qorvo TGA26xx-SM Low Noise Amplifiers are fabricated on a 0.25um GaN on SiC process (TQGaN25). Covering 2GHz to 6GHz, the TGA26xx-SM Amplifiers typically provides >22dB small signal gain and 30dBm of OTOI with 1.0dB NF. In addition to the high electrical performance, this GaN amplifier also provides a high level of input power robustness. Able to survive a high level of input power without performance degradation, Qorvo TGA26xx-SM provides flexibility regarding receive chain protection, resulting in reduced board space. This device is ideal for radar and satellite communication applications.