CoolMOS™ C7 Power MOSFETs

Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.

Results: 73
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Description Datasheet Availability Pricing (SGD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
583In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 19 A 120 mOhms - 20 V, 20 V 3 V 34 nC - 55 C + 150 C 92 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
860In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 13 A 155 mOhms - 20 V, 20 V 3 V 24 nC - 55 C + 150 C 68 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
99In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 24 A 84 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 128 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs N-Ch 650V 11A TO220-3
Datasheet
500In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 11 A 199 mOhms - 20 V, 20 V 3 V 20 nC - 55 C + 150 C 63 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
164In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 33 A 65 mOhms - 20 V, 20 V 3 V 64 nC - 55 C + 150 C 171 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
58In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 33 A 58 mOhms - 20 V, 20 V 3 V 64 nC - 55 C + 150 C 171 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs N-Ch 700V 75A TO247-4
Datasheet
73In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 75 A 17 mOhms - 20 V, 20 V 3 V 215 nC - 55 C + 150 C 446 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
25In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 22 A 99 mOhms - 20 V, 20 V 3 V 42 nC - 55 C + 150 C 110 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
3,000On Order
MouseReel Available
Min.: 1
Mult.: 1
: 1,000

Si SMD/SMT TO-263 N-Channel 1 Channel 650 V 13 A 404 mOhms - 20 V, 20 V 3.5 V 23 nC - 55 C + 150 C 72 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
479On Order
Min.: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 109 A 17 mOhms - 20 V, 20 V 3 V 240 nC - 55 C + 150 C 446 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs N-Ch 700V 46A TO247-4
Datasheet
240Expected 20/8/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 46 A 40 mOhms - 20 V, 20 V 3 V 93 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs 650V CoolMOS C7 Power Trans; 225mOhm
Datasheet
Non-Stocked Lead-Time 19 Weeks
Min.: 500
Mult.: 500

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 11 A 199 mOhms - 20 V, 20 V 3 V 20 nC - 55 C + 150 C 63 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
Non-Stocked Lead-Time 52 Weeks
Min.: 3,000
Mult.: 3,000
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 17 A 125 mOhms - 20 V, 20 V 3 V 34 nC - 40 C + 150 C 103 W Enhancement CoolMOS Reel
Infineon Technologies MOSFETs HIGH POWER BEST IN CLASS
Datasheet
Non-Stocked Lead-Time 52 Weeks
Min.: 3,000
Mult.: 3,000
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 650 V 28 A 62 mOhms - 20 V, 20 V 3 V 64 nC - 40 C + 150 C 169 W Enhancement CoolMOS Reel
Infineon Technologies MOSFETs HIGH POWER BEST IN CLASS
Datasheet
Non-Stocked Lead-Time 52 Weeks
Min.: 3,000
Mult.: 3,000
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 650 V 28 A 70 mOhms - 20 V, 20 V 3 V 64 nC - 40 C + 150 C 169 W Enhancement CoolMOS Reel
Infineon Technologies MOSFETs HIGH POWER BEST IN CLASS
Datasheet
Non-Stocked Lead-Time 52 Weeks
Min.: 3,000
Mult.: 3,000
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 650 V 21 A 88 mOhms - 20 V, 20 V 3 V 45 nC - 40 C + 150 C 128 W Enhancement CoolMOS Reel
Infineon Technologies MOSFETs HIGH POWER BEST IN CLASS
Datasheet
Non-Stocked Lead-Time 52 Weeks
MouseReel Available
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 650 V 21 A 99 mOhms - 20 V, 20 V 3 V 45 nC - 40 C + 150 C 128 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs 650V CoolMOS C7 Power Trans; 130mOhm
Datasheet
Non-Stocked Lead-Time 39 Weeks
Min.: 3,000
Mult.: 3,000
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 650 V 15 A 115 mOhms - 20 V, 20 V 3 V 35 nC - 40 C + 150 C 102 W Enhancement CoolMOS Reel
Infineon Technologies MOSFETs HIGH POWER BEST IN CLASS
Datasheet
Non-Stocked Lead-Time 39 Weeks
MouseReel Available
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 650 V 12 A 173 mOhms - 20 V, 20 V 3 V 23 nC - 40 C + 150 C 75 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
Non-Stocked Lead-Time 18 Weeks
Min.: 500
Mult.: 500

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 33 A 65 mOhms - 20 V, 20 V 3 V 64 nC - 55 C + 150 C 171 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
Non-Stocked Lead-Time 52 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 50 A 40 mOhms - 20 V, 20 V 3.5 V 107 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs N-Ch 700V 46A TO247-4
Datasheet
Non-Stocked Lead-Time 52 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 46 A 40 mOhms - 20 V, 20 V 3 V 93 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
Non-Stocked Lead-Time 52 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 33 A 58 mOhms - 20 V, 20 V 3 V 64 nC - 55 C + 150 C 171 W Enhancement CoolMOS Tube