Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

Types of Discrete Semiconductors
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Results: 309
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Description Datasheet Availability Pricing (SGD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS Product Type
Technology
Mounting Style
Package/Case
STMicroelectronics MOSFETs N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in DPAK package
Datasheet
Product Comments
Non-Stocked Lead-Time 26 Weeks
Min.: 2,500
Mult.: 2,500
: 2,500

MOSFETs Si SMD/SMT DPAK-3 (TO-252-3)
STMicroelectronics MOSFETs N-Ch 650V 0.098 Ohm 29A MDMesh M5 MOS
Datasheet
Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFETs N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in a TO-220FP packag
Datasheet
Lead-Time 24 Weeks
Min.: 1
Mult.: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics IGBTs 650V 60A Trench Gate Field-Stop IGBT
Datasheet
Lead-Time 22 Weeks
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
Datasheet
Non-Stocked Lead-Time 22 Weeks
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole
STMicroelectronics IGBTs Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
Datasheet
Non-Stocked Lead-Time 22 Weeks
Min.: 600
Mult.: 600

IGBT Transistors Si Through Hole
STMicroelectronics IGBTs Trench gate field-stop 650 V, 40 A, soft-switching IH series IGBT in a TO-247 lo
Datasheet
Lead-Time 22 Weeks
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs 650V 40A HSpd trench gate field-stop IGB
Datasheet
Non-Stocked Lead-Time 22 Weeks
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-3P
STMicroelectronics MOSFETs N-CH 80V 17mOhm 180A STripFET VII
Datasheet
Lead-Time 22 Weeks
MouseReel Available
Min.: 1
Mult.: 1
: 1,000

MOSFETs Si SMD/SMT H2PAK-2
STMicroelectronics MOSFETs N-Ch 650 V 0.075 Ohm 22.5 A Mdmesh
Datasheet
Non-Stocked Lead-Time 24 Weeks
MouseReel Available
Min.: 1
Mult.: 1
: 3,000

MOSFETs Si SMD/SMT PowerFLAT-8x8-HV-5
STMicroelectronics MOSFETs N-Ch 650V 0.43 Ohm 9A MDmeshV 710V
Datasheet
Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFETs N-channel 650 V, 370 mOhm typ., 10 A MDmesh M2 Power MOSFET in a TO-220 package
Datasheet
Non-Stocked Lead-Time 24 Weeks
Min.: 1,000
Mult.: 1,000

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFETs Automotive-grade N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET
Datasheet
Lead-Time 22 Weeks
Min.: 1
Mult.: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFETs N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in TO-220 package
Datasheet
Non-Stocked Lead-Time 24 Weeks
Min.: 1,000
Mult.: 1,000

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFETs N-Ch 800V .95Ohm 6A MDmesh K5
Datasheet
Lead-Time 24 Weeks
Min.: 1
Mult.: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFETs N-Ch 800V 0.76 Ohm 6 A MDmesh K5
Datasheet
Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1

MOSFETs Si Through Hole TO-220-3

STMicroelectronics MOSFETs N-channel 1050 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFETs in TO-247 package
Datasheet
Lead-Time 26 Weeks
Min.: 1
Mult.: 1

MOSFETs Si Through Hole TO-247-3

STMicroelectronics MOSFETs N-CH 600V 0.108Ohm typ. 26A MDmesh M2
Datasheet
Lead-Time 26 Weeks
Min.: 1
Mult.: 1

MOSFETs Si Through Hole TO-247-3

STMicroelectronics MOSFETs N-channel 650 V, 0.049 Ohm typ., 49 A MDmesh M2 Power MOSFET in a TO-247 package
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

MOSFETs Si Through Hole TO-247-3
STMicroelectronics MOSFETs N-channel 650 V, 0.049 Ohm typ., 49 A MDmesh M2 Power MOSFET in a TO247-4 packag
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 600
Mult.: 600

MOSFETs Si Through Hole TO-247-4
STMicroelectronics MOSFETs N-Channel 650V 93A 0.019 Ohm Mdmesh M5
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 600
Mult.: 600

MOSFETs Si Through Hole Max247-3
STMicroelectronics MOSFETs N-Ch 650V 0.014 Ohm Mdmesh M5 130A
Datasheet
Lead-Time 26 Weeks
Min.: 1
Mult.: 1

MOSFETs Si Through Hole Max247-3
STMicroelectronics MOSFETs N-CH 800V 2.8Ohm typ 2.5A Zener-protected
Datasheet
Lead-Time 24 Weeks
Min.: 1
Mult.: 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFETs N-channel 1050 V, 2.9 Ohm typ., 3 A MDmesh K5 Power MOSFET in TO-220FP package
Datasheet
Non-Stocked Lead-Time 24 Weeks
Min.: 1,000
Mult.: 1,000

MOSFETs Si Through Hole TO-220-3
STMicroelectronics IGBTs 650V 60A HSpd trench gate field-stop IGB
Datasheet
Lead-Time 22 Weeks
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-3P