It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

STD25NF20

Name: STMicroelectronics STD25NF20
Brand: STMicroelectronics
SKU: 511-STD25NF20
Price: 3.28 SGD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-STD25NF20

Mfr. No:

STD25NF20

Mfr.:

STMicroelectronics

Description:

MOSFETs N-Ch 200V 0.10Ohm 18 A StripFET FET

Complete Your Design

Datasheet:

STD25NF20 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STD25NF20

In Stock: 3,662

Stock:: 3,662 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 15 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+$10.00)

Pricing (SGD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$3.28	$3.28
	$2.08	$20.80
	$1.40	$140.00
	$1.14	$570.00
	$1.02	$1,020.00
Full Reel (Order in multiples of 2500)
	$0.953	$2,382.50
	$0.911	$4,555.00

† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	18 A
Rds On - Drain-Source Resistance:	125 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	28 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	110 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	STripFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	10 ns
Product Type:	MOSFETs
Rise Time:	30 ns
Series:	STD25NF20
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel Power MOSFET
Typical Turn-Off Delay Time:	40 ns
Typical Turn-On Delay Time:	15 ns
Unit Weight:	330 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

STD25NF20 Datasheet (PDF)

PCN

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Singapore
Assembly Country of Origin:: Singapore
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low R_DS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.

STripFET I™ Power MOSFETs

STMicroelectronics STripFET I™ Power MOSFETs are enhancement mode Power MOSFETs that benefit from the "single feature size" strip-based process. This decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics, and low gate charge. This makes these devices ideal for switching automotive applications.