GaN FETs – Mouser Singapore

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TGF2965-SM GaN RF Input-Matched Transistor

Qorvo TGF2965-SM GaN RF Input-Matched Transistor is a 6W (P3dB), 50Ω-input matched discrete GaN (Gallium-Nitride) on SiC (Silicon Carbide) HEMT (High-Electron Mobility Transistor) which operates from 0.03GHz to 3.0GHz. The integrated input matching network enables wideband gain and power performance. The output can be matched on board to optimize power and efficiency for any region within the band.

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Select	Image	Part #	Mfr.	Description	Datasheet	Availability	Pricing (SGD) Filter the results in the table by unit price based on your quantity.	Qty.	RoHS	ECAD Model	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Vgs - Gate-Source Voltage	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Maximum Operating Frequency	Minimum Operating Frequency	Technology
	GaN FETs 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V TGF2965-SM Qorvo 1: $86.78 722In Stock	Mfr. Part No. TGF2965-SM Mouser Part No 772-TGF2965-SM	Qorvo	GaN FETs 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V Learn More about Qorvo tgf2965 sm transistor	Datasheet	722In Stock	$86.78 $85.92 $66.48	Min.: 1 Mult.: 1			SMD/SMT	QFN-16	P-Channel		32 V	600 mA				7.5 W	3 GHz	30 MHz	GaN
	GaN FETs .03-3GHz,5W,32V,50OhmGaNRFI/P-MtchT TGF2965-SMTR13 Qorvo 2,500: $68.84 Non-Stocked Lead-Time 12 Weeks	Mfr. Part No. TGF2965-SMTR13 Mouser Part No 772-TGF2965-SMTR13	Qorvo	GaN FETs .03-3GHz,5W,32V,50OhmGaNRFI/P-MtchT	Datasheet	Non-Stocked Lead-Time 12 Weeks	Reel $68.84	Min.: 2,500 Mult.: 2,500 : 2,500			SMD/SMT	QFN-16	N-Channel	1 Channel	32 V	600 mA	- 7 V, + 2 V	- 40 C	+ 85 C	7.5 W			GaN-on-SiC

TGF2965-SM GaN RF Input-Matched Transistor

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