GaN HEMTs

MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.

Results: 32
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (SGD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Maximum Operating Frequency
Minimum Operating Frequency
Technology
MACOM GaN FETs GaN HEMT 1.2-1.4GHz, 500 Watt
Datasheet
Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Screw Mount 440117 N-Channel 150 V 36 A - 3 V - 40 C + 130 C 1.4 GHz 1.2 GHz GaN
MACOM GaN FETs GaN HEMT Die DC-18GHz, 6 Watt
Datasheet
Product Comments
Non-Stocked Lead-Time 26 Weeks
Min.: 10
Mult.: 10

SMD/SMT Die N-Channel 100 V 800 mA 2.3 Ohms - 3 V 18 GHz 10 MHz GaN
MACOM GaN FETs GaN HEMT DC-2.7GHz, 60 Watt
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 250
Mult.: 250
: 250

SMD/SMT QSOP-20 N-Channel 150 V 6.3 A - 3 V - 40 C + 90 C 2.7 GHz 0 Hz GaN
MACOM GaN FETs GaN HEMT Die DC-6.0GHz, 40 Watt
Datasheet
Product Comments
Non-Stocked Lead-Time 26 Weeks
Min.: 50
Mult.: 10

SMD/SMT Die N-Channel 2 Channel 50 V 3.2 A 6 GHz 0 Hz GaN
MACOM GaN FETs GaN HEMT Die DC-6.0GHz, 170 Watt
Datasheet
Product Comments

SMD/SMT Die N-Channel 8 Channel 50 V 12.6 A 6 GHz 0 Hz GaN
MACOM GaN FETs GaN HEMT 7.9-9.6GHz, 50 Watt
Datasheet

Screw Mount 440210 N-Channel 100 V 6 A 2.3 V - 40 C + 150 C 9.6 GHz 8.4 GHz GaN
MACOM GaN FETs GaN HEMT 7.9-9.6GHz, 100 Watt
Datasheet

Screw Mount 440210 N-Channel 100 V 12 A - 3 V - 40 C + 150 C 9.6 GHz 7.9 GHz GaN