CoolMOS™ Superjunction MOSFETs

Infineon CoolMOS™ Power Transistors provide all the benefits of a fast-switching SJ MOSFET. Combined with the generation CoolMOS 7, Infineon continues to set price, performance, and quality benchmarks.

Results: 182
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Description Datasheet Availability Pricing (SGD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Tradename
Packaging
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
Non-Stocked Lead-Time 18 Weeks
Min.: 2,000
Mult.: 2,000
: 2,000

Si CoolMOS Reel
Infineon Technologies MOSFETs LOW POWER_NEW
Datasheet
Non-Stocked Lead-Time 19 Weeks
Min.: 1,500
Mult.: 1,500

Si Through Hole TO-251-3 N-Channel 1 Channel 800 V 8 A 510 mOhms - 20 V, 20 V 2.5 V 20 nC - 55 C + 150 C 60 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs AUTOMOTIVE_COOLMOS
Datasheet
Non-Stocked Lead-Time 40 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 24 A 115 mOhms - 20 V, 20 V 4.5 V 41 nC - 55 C + 150 C 114 W Enhancement AEC-Q101 CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
Non-Stocked Lead-Time 52 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 37 A 69 mOhms - 20 V, 20 V 3 V 51 nC - 55 C + 150 C 129 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
Non-Stocked Lead-Time 8 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 21 A 105 mOhms - 20 V, 20 V 3.5 V 42 nC - 55 C + 150 C 106 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER NEW
Datasheet
Non-Stocked Lead-Time 52 Weeks
Min.: 2,000
Mult.: 2,000
: 2,000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 600 V 20 A 108 mOhms - 20 V, 20 V 3 V 27 nC - 55 C + 150 C 120 W Enhancement Reel

Infineon Technologies MOSFETs LOW POWER_NEW
Datasheet
Non-Stocked Lead-Time 18 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 13 A 310 mOhms - 20 V, 20 V 2.5 V 30 nC - 55 C + 150 C 84 W Enhancement CoolMOS Tube