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STDRIVEG611Q

Name: STMicroelectronics STDRIVEG611Q
Brand: STMicroelectronics
SKU: 511-STDRIVEG611Q
Price: 4.72 SGD
Availability: InStock

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Mouser No:

511-STDRIVEG611Q

Mfr. No:

STDRIVEG611Q

Mfr.:

STMicroelectronics

Description:

Gate Drivers High voltage and high-speed half-bridge gate driver for GaN power switches

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Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

STDRIVEG611Q Datasheet (PDF)

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Learn more about STMicroelectronics STDRIVEG611Q

In Stock: 172

Stock:: 172 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$4.72	$4.72
	$3.52	$35.20
	$3.22	$80.50
	$2.88	$288.00
	$2.73	$682.50
	$2.67	$1,335.00
	$2.53	$2,530.00
	$2.39	$5,975.00
	$2.34	$11,466.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	Gate Drivers
RoHS:
Product:	Gate Drivers
Type:	Half-Bridge
Mounting Style:	SMD/SMT
Package/Case:	QFN-18
Number of Drivers:	2 Driver
Number of Outputs:	3 Output
Supply Voltage - Min:	10.6 V
Supply Voltage - Max:	18 V
Configuration:	Inverting, Non-Inverting
Rise Time:	11 ns
Fall Time:	22 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Packaging:	Tray
Brand:	STMicroelectronics
Input Voltage - Max:	20 V
Input Voltage - Min:	3.3 V
Maximum Turn-Off Delay Time:	60 ns
Maximum Turn-On Delay Time:	60 ns
Moisture Sensitive:	Yes
Product Type:	Gate Drivers
Shutdown:	No Shutdown
Factory Pack Quantity:	4900
Subcategory:	PMIC - Power Management ICs
Technology:	GaN
Unit Weight:	44 mg

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Datasheet

STDRIVEG611Q Datasheet (PDF)

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Compliance Codes

CNHTS:: 8542399000
USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Thailand
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

STDRIVEG611 Half-Bridge Gate Driver

STMicroelectronics STDRIVEG611 Half-Bridge Gate Driver is a high-voltage half-bridge gate driver for N-channel Enhancement Mode GaN. The high-side driver section is designed to stand a voltage rail up to 600V and can be easily supplied by the integrated bootstrap diode. High current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG611 optimized for driving high-speed GaN.