It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

IS43R86400D-5TL

Name: ISSI IS43R86400D-5TL
Brand: ISSI
SKU: 870-IS43R86400D-5TL
Price: 13.44 SGD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

870-IS43R86400D-5TL

Mfr. No:

IS43R86400D-5TL

Mfr.:

ISSI

Description:

DRAM 512M (64Mx8) 200MHz 2.5v DDR SDRAM

Lifecycle:

Factory Special Order:

Obtain a quote to verify the current price, lead-time and ordering requirements of the manufacturer.

Datasheet:

IS43R86400D-5TL Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about ISSI IS43R86400D-5TL

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ISSI
Product Category:	DRAM
RoHS:
Type:	SDRAM - DDR
Memory Size:	512 Mbit
Data Bus Width:	8 bit
Maximum Clock Frequency:	200 MHz
Package/Case:	TSOP-II-66
Organisation:	64 M x 8
Access Time:	5 ns
Supply Voltage - Min:	2.5 V
Supply Voltage - Max:	2.7 V
Minimum Operating Temperature:	0 C
Maximum Operating Temperature:	+ 70 C
Series:	IS43R86400D
Packaging:	Tray
Brand:	ISSI
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Product Type:	DRAM
Factory Pack Quantity:	108
Subcategory:	Memory & Data Storage
Supply Current - Max:	430 mA

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IS43R86400D-5TL Datasheet (PDF)

This functionality requires JavaScript to be enabled.

Compliance Codes

CNHTS:: 8542319090
CAHTS:: 8542320020
USHTS:: 8542320028
JPHTS:: 8542320216
KRHTS:: 8542321010
MXHTS:: 8542320299
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Taiwan

The country is subject to change at the time of shipment.

DDR SDRAM

ISSI 512-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 536,870,912-bit memory array is internally organized as four banks of 128Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence, and CAS latency enable further advantages. The device is available in 8-bit, 16-bit, and 32-bit data word sizes. Input data is registered on the I/O pins on both edges of Data Strobe signal(s), while output data is referenced to both edges of Data Strobe and both edges of CLK. ISSI 512-Mbit DDR SDRAM commands are registered on the positive edges of CLK.

IS43R32800D 8Mx32 256-Mbit DDR SDRAM

ISSI IS43R32800D 8Mx32 256-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268,435,456-bit memory array is internally organized as four banks of 64MB to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence, and CAS latency enable further advantages.

IS43R86400D 512Mb DDR SDRAM

ISSI IS43R86400D 512Mb DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 536,870,912-bit memory array is internally organized as four banks of 128Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. ISSI IS43R86400D 512Mb DDR SDRAM features programmable burst length, burst sequence, and CAS latency, enabling further advantages.