AT28C256-25DM/883

Microchip / Microsemi
556-28C256-25DM/883
AT28C256-25DM/883

Mfr.:

Description:
EEPROM 256K 11MIL GRIND - 250NS 883C
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Datasheet:
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Learn more about Microchip / Microsemi AT28C256-25DM/883
This product may require additional documentation to export from the United States.

In Stock: 16

Stock:
16 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
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Ext. Price:
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Est. Tariff:
This Product Ships FREE

Pricing (SGD)

Qty. Unit Price
Ext. Price
$350.82 $350.82

Product Attribute Attribute Value Select Attribute
Microchip
Product Category: EEPROM
Delivery Restrictions:
 This product may require additional documentation to export from the United States.
RoHS:  
256 kbit
Parallel
32 k x 8
CDIP-28
150 ns
4.5 V
5.5 V
Through Hole
10 Year
- 55 C
+ 125 C
AT28C256
Tube
Active Read Current - Max: 50 mA
Brand: Microchip / Microsemi
Moisture Sensitive: Yes
Operating Supply Current: 50 mA
Operating Supply Voltage: 2.7 V, 3.6 V
Output Enable Access Time: 100 ns
Product Type: EEPROM
Factory Pack Quantity: 14
Subcategory: Memory & Data Storage
Supply Current - Max: 50 mA
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Compliance Codes
CNHTS:
8542319000
CAHTS:
8542320040
USHTS:
8542320051
JPHTS:
8542320393
TARIC:
8542327500
MXHTS:
8542320299
ECCN:
3A001.a.2.c
Origin Classifications
Country of Origin:
Thailand
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

AT28C256 256K EEPROM Memory

Microchip AT28C256 256K EEPROM Memory devices are high-performance, Electrically Erasable, and Programmable Read-only Memory (EEPROM). The EEPROM 256K of memory is organized as 32,768 words by 8-bits. These devices are manufactured with Atmel's advanced non-volatile CMOS technology, offering 150ns access time with 440mW power dissipation. The AT28C256 memory devices are accessed like static RAM for reading or writing cycles without needing external components. These AT28C256 devices contain a 64-byte page register to allow writing up to 64 bytes. The EEPROM devices utilize an internal error correction for extended endurance and improved data retention. 

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