|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
- SCT055W65G3-4AG
- STMicroelectronics
-
1:
$17.40
-
57In Stock
|
Mouser Part No
511-SCT055W65G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
57In Stock
|
|
|
$17.40
|
|
|
$14.16
|
|
|
$11.80
|
|
|
$8.59
|
|
|
Quote
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
32 nC
|
- 55 C
|
+ 200 C
|
210 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
- SCT070H120G3AG
- STMicroelectronics
-
1:
$16.92
-
85In Stock
|
Mouser Part No
511-SCT070H120G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
|
|
85In Stock
|
|
|
$16.92
|
|
|
$11.84
|
|
|
$10.19
|
|
|
$10.17
|
|
|
$8.31
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
- SCT070HU120G3AG
- STMicroelectronics
-
1:
$18.97
-
73In Stock
-
1,200Expected 16/3/2026
|
Mouser Part No
511-SCT070HU120G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
|
|
73In Stock
1,200Expected 16/3/2026
|
|
|
$18.97
|
|
|
$13.29
|
|
|
$11.76
|
|
|
$9.59
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
- SCT1000N170
- STMicroelectronics
-
1:
$12.34
-
592In Stock
|
Mouser Part No
511-SCT1000N170
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
|
|
592In Stock
|
|
|
$12.34
|
|
|
$8.45
|
|
|
$6.24
|
|
|
$5.48
|
|
|
$5.46
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.7 kV
|
6 A
|
1 Ohms
|
- 10 V, + 25 V
|
2.1 V
|
14 nC
|
- 55 C
|
+ 200 C
|
120 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
- SCT20N120AG
- STMicroelectronics
-
1:
$22.10
-
510In Stock
|
Mouser Part No
511-SCT20N120AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
|
|
510In Stock
|
|
|
$22.10
|
|
|
$16.30
|
|
|
$11.36
|
|
|
View
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
|
N-Channel
|
1 Channel
|
1.2 kV
|
20 A
|
239 mOhms
|
- 20 V, + 20 V
|
3.5 V
|
45 nC
|
- 55 C
|
+ 200 C
|
175 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL90N65G2V
- STMicroelectronics
-
1:
$40.53
-
1,597In Stock
|
Mouser Part No
511-SCTL90N65G2V
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
1,597In Stock
|
|
|
$40.53
|
|
|
$31.01
|
|
|
$25.33
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
1 Channel
|
650 V
|
40 A
|
18 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 175 C
|
935 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
- SCTW40N120G2VAG
- STMicroelectronics
-
1:
$23.91
-
593In Stock
|
Mouser Part No
511-SCTW40N120G2VAG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
|
|
593In Stock
|
|
|
$23.91
|
|
|
$14.83
|
|
|
$12.95
|
|
|
$12.94
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
100 mOhms
|
- 10 V, + 22 V
|
4.9 V
|
61 nC
|
- 55 C
|
+ 200 C
|
278 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H
- SCTW100N65G2AG
- STMicroelectronics
-
1:
$35.63
-
317In Stock
-
NRND
|
Mouser Part No
511-SCTW100N65G2AG
NRND
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H
|
|
317In Stock
|
|
|
$35.63
|
|
|
$31.61
|
|
|
$31.28
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
650 V
|
100 A
|
69 mOhms
|
- 10 V, + 22 V
|
5 V
|
162 nC
|
- 55 C
|
+ 200 C
|
420 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
- SCTWA40N12G24AG
- STMicroelectronics
-
1:
$24.41
-
90In Stock
|
Mouser Part No
511-SCTWA40N12G24AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
|
|
90In Stock
|
|
|
$24.41
|
|
|
$17.35
|
|
|
$13.37
|
|
|
$13.29
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
33 A
|
105 mOhms
|
- 18 V, + 18 V
|
5 V
|
63 nC
|
- 55 C
|
+ 200 C
|
290 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3AG
- STMicroelectronics
-
1:
$23.85
-
9In Stock
-
2,000Expected 12/10/2026
-
New Product
|
Mouser Part No
511-SCT025H120G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
|
|
9In Stock
2,000Expected 12/10/2026
|
|
|
$23.85
|
|
|
$16.93
|
|
|
$15.80
|
|
|
$12.90
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
- SCTWA90N65G2V-4
- STMicroelectronics
-
1:
$40.16
-
151In Stock
|
Mouser Part No
511-SCTWA90N65G2V-4
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
|
|
151In Stock
|
|
|
$40.16
|
|
|
$30.61
|
|
|
$28.26
|
|
|
$24.41
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
119 A
|
24 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 200 C
|
565 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
- SCTWA70N120G2V-4
- STMicroelectronics
-
1:
$41.02
-
28In Stock
|
Mouser Part No
511-SCTWA70N120G2V-4
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
|
|
28In Stock
|
|
|
$41.02
|
|
|
$29.40
|
|
|
$28.77
|
|
|
View
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HIP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
91 A
|
30 mOhms
|
- 10 V, + 22 V
|
2.45 V
|
150 nC
|
- 55 C
|
+ 200 C
|
547 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
- SCT015W120G3-4AG
- STMicroelectronics
-
1:
$33.68
-
600Expected 26/10/2026
|
Mouser Part No
511-SCT015W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
|
|
600Expected 26/10/2026
|
|
|
$33.68
|
|
|
$27.56
|
|
|
$24.34
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
129 A
|
15 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
167 nC
|
- 55 C
|
+ 200 C
|
673 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
$25.26
-
1,200On Order
|
Mouser Part No
511-SCT025W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
1,200On Order
On Order:
600 Expected 1/5/2026
600 Expected 10/8/2026
Factory Lead Time:
17 Weeks
|
|
|
$25.26
|
|
|
$20.22
|
|
|
$17.49
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027HU65G3AG
- STMicroelectronics
-
1:
$18.78
-
400Expected 4/1/2027
-
New Product
|
Mouser Part No
511-SCT027HU65G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
400Expected 4/1/2027
|
|
|
$18.78
|
|
|
$14.01
|
|
|
$12.12
|
|
|
$11.48
|
|
|
$9.74
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
- SCT040H120G3AG
- STMicroelectronics
-
1:
$17.63
-
996Expected 22/4/2026
|
Mouser Part No
511-SCT040H120G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
|
|
996Expected 22/4/2026
|
|
|
$17.63
|
|
|
$12.36
|
|
|
$10.74
|
|
|
$10.73
|
|
|
$8.77
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
54 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
- SCT055HU65G3AG
- STMicroelectronics
-
1:
$17.39
-
1,113Expected 18/3/2026
|
Mouser Part No
511-SCT055HU65G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
1,113Expected 18/3/2026
|
|
|
$17.39
|
|
|
$12.26
|
|
|
$10.63
|
|
|
$8.69
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 10 V, + 22 V
|
4.2 V
|
29 nC
|
- 55 C
|
+ 175 C
|
185 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
- SCT10N120AG
- STMicroelectronics
-
1:
$12.76
-
844Expected 23/11/2026
|
Mouser Part No
511-SCT10N120AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
|
|
844Expected 23/11/2026
|
|
|
$12.76
|
|
|
$7.23
|
|
|
$5.74
|
|
|
$5.73
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
|
N-Channel
|
1 Channel
|
1.2 kV
|
12 A
|
500 mOhms
|
- 10 V, + 25 V
|
3.5 V
|
22 nC
|
- 55 C
|
+ 200 C
|
150 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3-7
- STMicroelectronics
-
1:
$23.32
-
100On Order
-
New Product
|
Mouser Part No
511-SCT025H120G3-7
New Product
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
|
|
100On Order
|
|
|
$23.32
|
|
|
$18.04
|
|
|
$15.60
|
|
|
$15.60
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
- SCT040W120G3-4
- STMicroelectronics
-
1:
$15.82
-
100On Order
-
New Product
|
Mouser Part No
511-SCT040W120G3-4
New Product
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
|
|
100On Order
|
|
|
$15.82
|
|
|
$12.89
|
|
|
$10.73
|
|
|
$9.56
|
|
|
$8.12
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247
- SCTWA90N65G2V
- STMicroelectronics
-
1:
$39.24
-
69Expected 16/3/2026
|
Mouser Part No
511-SCTWA90N65G2V
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247
|
|
69Expected 16/3/2026
|
|
|
$39.24
|
|
|
$25.42
|
|
|
$24.33
|
|
|
Quote
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
650 V
|
119 A
|
24 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 200 C
|
565 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A
- SCT011H75G3AG
- STMicroelectronics
-
1:
$32.28
-
Non-Stocked Lead-Time 16 Weeks
-
New Product
|
Mouser Part No
511-SCT011H75G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A
|
|
Non-Stocked Lead-Time 16 Weeks
|
|
|
$32.28
|
|
|
$26.91
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$26.90
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$22.52
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View
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Quote
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Min.: 1
Mult.: 1
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SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A
- SCT014HU65G3AG
- STMicroelectronics
-
600:
$19.67
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Non-Stocked Lead-Time 18 Weeks
-
New Product
|
Mouser Part No
511-SCT014HU65G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A
|
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Non-Stocked Lead-Time 18 Weeks
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Min.: 600
Mult.: 600
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SiC MOSFETs Silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A in a TO-LL package
- SCT014TO65G3
- STMicroelectronics
-
1,800:
$15.26
-
Non-Stocked Lead-Time 19 Weeks
-
New Product
|
Mouser Part No
511-SCT014TO65G3
New Product
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A in a TO-LL package
|
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Non-Stocked Lead-Time 19 Weeks
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Min.: 1,800
Mult.: 1,800
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SiC MOSFETs Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3-7
- STMicroelectronics
-
1,000:
$13.69
-
Non-Stocked Lead-Time 16 Weeks
-
New Product
|
Mouser Part No
511-SCT018H65G3-7
New Product
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
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Non-Stocked Lead-Time 16 Weeks
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Min.: 1,000
Mult.: 1,000
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SMD/SMT
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H2PAK-7
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N-Channel
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1 Channel
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650 V
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55 A
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27 mOhms
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-10 V, 22 V
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4.2 V
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79.4 nC
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- 55 C
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+ 175 C
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385 W
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Enhancement
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Singapore