CoolSiC™ 400V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 400V G2 Silicon Carbide MOSFETs are ideally suited for hard- and resonant-switching topologies. The Infineon 400V CoolSiC MOSFETs were specially developed for use in the AC/DC stage of AI server Power Supply Units (PSUs) and are also ideal for applications such as solar and energy storage systems. CoolSiC MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation.

Results: 15
Select Image Part # Mfr. Description Datasheet Availability Pricing (SGD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 1,440In Stock
Min.: 1
Mult.: 1
Reel: 1,800

SiC SMD/SMT HDSOP-16 N-Channel 1 Channel 400 V 111 A 19.1 mOhms - 7 V, 23 V 4.5 V 62 nC - 55 C + 175 C 341 W Enhancement CoolSiC Reel, Cut Tape
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 1,388In Stock
Min.: 1
Mult.: 1
Reel: 1,800

SiC SMD/SMT HDSOP-16 N-Channel 1 Channel 400 V 68 A 32.1 mOhms - 7 V, 23 V 4.5 V 36 nC - 55 C + 175 C 214 W Enhancement CoolSiC Reel, Cut Tape
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 213In Stock
Min.: 1
Mult.: 1

SiC Through Hole TO-247-3 N-Channel 1 Channel 400 V 94 A 19.1 mOhms - 7 V, 23 V 4.5 V 62 nC - 55 C + 175 C 273 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 230In Stock
Min.: 1
Mult.: 1

SiC Through Hole TO-247-3 N-Channel 1 Channel 400 V 104 A 14.4 mOhms - 7 V, 23 V 4.5 V 85 nC - 55 C + 175 C 341 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 376In Stock
Min.: 1
Mult.: 1

SiC Through Hole TO-247-3 N-Channel 1 Channel 400 V 65 A 32.1 mOhms - 7 V, 23 V 4.5 V 36 nC - 55 C + 175 C 195 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET 1,352In Stock
Min.: 1
Mult.: 1
Reel: 1,800

SiC SMD/SMT HDSOP-16 N-Channel 1 Channel 400 V 144 A 14.4 mOhms - 7 V, 23 V 4.5 V 85 nC - 55 C + 175 C 429 W Enhancement CoolSiC Reel, Cut Tape
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
1,800Expected 26/2/2026
Min.: 1
Mult.: 1
Reel: 1,800

SiC SMD/SMT HDSOP-16 N-Channel 1 Channel 400 V 43 A 56.2 mOhms - 7 V, 23 V 4.5 V 21 nC - 55 C + 175 C 150 W Enhancement CoolSiC Reel, Cut Tape
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
1,800Expected 26/2/2026
Min.: 1
Mult.: 1
Reel: 1,800

SiC SMD/SMT HDSOP-16 N-Channel 1 Channel 400 V 50 A 45.7 mOhms - 7 V, 23 V 4.5 V 26 nC - 55 C + 175 C 167 W Enhancement CoolSiC Reel, Cut Tape
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
239Expected 26/2/2026
Min.: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 400 V 112 A 14.4 mOhms - 7 V, 23 V 4.5 V 85 nC - 55 C + 175 C 341 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
240Expected 26/2/2026
Min.: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 400 V 99 A 19.1 mOhms - 7 V, 23 V 4.5 V 62 nC - 55 C + 175 C 273 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
236Expected 26/2/2026
Min.: 1
Mult.: 1

SiC Through Hole TO-247-3 N-Channel 1 Channel 400 V 40 A 56.2 mOhms - 7 V, 23 V 4.5 V 21 nC - 55 C + 175 C 130 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
240On Order
Min.: 1
Mult.: 1

SiC Through Hole TO-247-3 N-Channel 1 Channel 400 V 46 A 45.7 mOhms - 7 V, 23 V 4.5 V 26 nC - 55 C + 175 C 139 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
240Expected 26/2/2026
Min.: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 400 V 65 A 32.1 Ohms - 7 V, 23 V 4.5 V 36 nC - 55 C + 175 C 195 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
240Expected 26/2/2026
Min.: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 400 V 46 A 45.7 mOhms - 7 V, 23 V 4.5 V 26 nC - 55 C + 175 C 139 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
240On Order
Min.: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 400 V 40 A 56.2 Ohms - 7 V, 23 V 4.5 V 21 nC - 55 C + 175 C 130 W Enhancement CoolSiC Tube