Toshiba DTMOSIV MOSFETs

Results: 112
Select Image Part # Mfr. Description Datasheet Availability Pricing (SGD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
Toshiba MOSFETs Power MOSFET 49.2A 400W 650V Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 49.2 A 55 mOhms - 30 V, 30 V 2.5 V 160 nC + 150 C 400 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Power MOSFET N-Channel Non-Stocked Lead-Time 32 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 5.8 A 850 mOhms - 30 V, 30 V 2.5 V 11 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Power MOSFET N-Channel Non-Stocked Lead-Time 20 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 650 V 5.8 A 890 mOhms - 30 V, 30 V 2.5 V 11 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 800V 700pF 13nC 6.5A 110W Non-Stocked Lead-Time 20 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6.5 A 795 mOhms - 20 V, 20 V 3 V 13 nC - 55 C + 150 C 110 W Enhancement DTMOSIV Tube
Toshiba MOSFETs DTMOSIV 600V 600mOhm DPKw/Hgh Speed Diode Non-Stocked Lead-Time 20 Weeks
Min.: 2,000
Mult.: 2,000
Reel: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 7 A 540 mOhms - 30 V, 30 V 4.5 V 16 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Reel
Toshiba MOSFETs N-Ch 8A 30W FET 600V 570pF 18.5nC Non-Stocked Lead-Time 32 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 8 A 420 mOhms - 30 V, 30 V 3.7 V 18.5 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Power MOSFET N-Channel Non-Stocked Lead-Time 32 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 7.8 A 530 mOhms - 30 V, 30 V 2.5 V 16 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFETs DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC Non-Stocked Lead-Time 20 Weeks
Min.: 2,000
Mult.: 2,000
Reel: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 8 A 420 mOhms - 30 V, 30 V 3.7 V 18.5 nC - 55 C + 150 C 80 W Enhancement DTMOSIV Reel
Toshiba MOSFETs DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC Non-Stocked Lead-Time 20 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 600 V 8 A 420 mOhms - 30 V, 30 V 3.7 V 18.5 nC - 55 C + 150 C 80 W DTMOSIV Tube
Toshiba MOSFETs Power MOSFET N-Channel Non-Stocked Lead-Time 20 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 650 V 7.8 A 550 mOhms - 30 V, 30 V 2.5 V 16 nC - 55 C + 150 C 80 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Power MOSFET N-Channel Non-Stocked Lead-Time 32 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 9.3 A 430 mOhms - 30 V, 30 V 2.5 V 20 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Power MOSFET N-Channel Non-Stocked Lead-Time 20 Weeks
Min.: 2,000
Mult.: 2,000
Reel: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 9.3 A 460 mOhms - 30 V, 30 V 2.5 V 20 nC - 55 C + 150 C 80 W Enhancement DTMOSIV Reel