Silicon Carbide (SiC) Schottky Barrier Diodes

Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.

Types of Discrete Semiconductors

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Results: 33
Select Image Part # Mfr. Description Datasheet Availability Pricing (SGD) Filter the results in the table by unit price based on your quantity. Qty. RoHS Product Type Technology Mounting Style Package/Case
Microchip Technology SiC MOSFETs MOSFET SIC 1200 V 80 mOhm TO-247-4 70In Stock
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole TO-247-4
Microchip Technology SiC MOSFETs MOSFET SIC 1700 V 750 mOhm TO-268 146In Stock
Min.: 1
Mult.: 1

SiC MOSFETS SiC SMD/SMT D3PAK-3
Microchip Technology SiC MOSFETs MOSFET SIC 1700 V 35 mOhm TO-247-4 3In Stock
510Expected 12/10/2026
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole TO-247-4
Microchip Technology SiC MOSFETs MOSFET SIC 1700 V 35 mOhm TO-247
80On Order
Min.: 1
Mult.: 1

SiC MOSFETS SiC Through Hole TO-247-3
Microchip Technology Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SOT227 Lead-Time 20 Weeks
Min.: 1
Mult.: 1

Discrete Semiconductor Modules SiC Screw Mount SOT-227
Microchip Technology SiC Schottky Diodes SIC SBD 700 V 10 A TO-268 Non-Stocked Lead-Time 14 Weeks
Min.: 270
Mult.: 30

SiC Schottky Diodes SMD/SMT TO-268-3
Microchip Technology SiC Schottky Diodes SIC SBD 1200 V 15 A TO-220 Non-Stocked Lead-Time 15 Weeks
Min.: 150
Mult.: 50

SiC Schottky Diodes Through Hole TO-220-2
Microchip Technology SiC Schottky Diodes SIC SBD 1200 V 20 A TO-220 Non-Stocked Lead-Time 15 Weeks
Min.: 100
Mult.: 50

SiC Schottky Diodes Through Hole TO-220-2