Newest RF Transistors
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Ampleon BLF981/BLF981S LDMOS Power Transistors
05/15/2025
05/15/2025
Designed for high-efficiency broadband applications across a frequency range from HF to 1400MHz.
Ampleon BLP981 LDMOS Power Transistor
05/15/2025
05/15/2025
170W power transistor engineered for broadband applications spanning from HF up to 1400MHz.
Mini-Circuits TAV1 Transistors
12/01/2023
12/01/2023
Designed with highly repeatable D-pHEMT and E-pHEMT technology in a small 1.4mm x 1.2mm package.
CEL Low Noise FETs & ICs
07/09/2023
07/09/2023
Deliver exceptional noise performance even beyond 20GHz with high associated gains.
Nexperia SOT323 Surface-Mounted Package Products
07/26/2022
07/26/2022
A plastic, 3 leads, 1.3mm pitch, 2mm x 1.25mm x 0.95mm body surface-mounted package.
Nexperia SOT23 Surface-Mounted Package Products
07/26/2022
07/26/2022
Contained in a plastic, surface-mounted, three terminals, 1.9mm pitch, 2.9mm x 1.3mm x 1mm package.
Qorvo QPD2060D 600µm Discrete GaAs pHEMT
04/19/2022
04/19/2022
Provides 28dBm of output power at P1dB, 12dB gain, and 55% power-added efficiency at 1dB.
Qorvo QPD2120D 1200µm Discrete GaAs pHEMT
04/19/2022
04/19/2022
Provides 31dBm of output power at P1dB, 11.5dB gain, and 57% power-added efficiency at 1dB.
Qorvo QPD2160D 1600µm Discrete GaAs pHEMT
04/19/2022
04/19/2022
Provides 32.5dBm of output power at P1dB, 10.4dB gain, and 63% power-added efficiency at 1dB.
Qorvo QPD2080D 800µm Discrete GaAs pHEMT
04/19/2022
04/19/2022
Provides 29.5dBm of output power at P1dB, 11.5dB gain, and 56% power-added efficiency at 1dB.
Qorvo QPD2018D 180um Discrete GaAs pHEMT Die
02/14/2022
02/14/2022
Utilizes Qorvo's proven standard 0.25um power pHEMT production process.
Qorvo QPD2025D 250um Discrete GaAs pHEMT Die
02/14/2022
02/14/2022
Developed using Qorvo's proven standard 0.25um power pHEMT production process.
Qorvo QPD2040D 400um Discrete GaAs pHEMT Die
02/14/2022
02/14/2022
Designed using Qorvo's proven standard 0.25um power pHEMT production process.
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