FM25V10-DG

Infineon Technologies
727-FM25V10-DG
FM25V10-DG

Mfr.:

Description:
F-RAM FRAM

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 102

Stock:
102 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (SGD)

Qty. Unit Price
Ext. Price
$24.10 $24.10
$22.37 $223.70
$21.66 $541.50
$21.14 $1,057.00
$20.61 $2,061.00
$19.65 $4,912.50
$18.78 $6,948.60
1,110 Quote

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: F-RAM
RoHS:  
1 Mbit
SPI
25 MHz, 40 MHz
128 k x 8
DFN-8
2 V
3.6 V
- 40 C
+ 85 C
FM25V10-G
Tube
Brand: Infineon Technologies
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Operating Supply Voltage: 2 V to 3.6 V
Product Type: FRAM
Factory Pack Quantity: 370
Subcategory: Memory & Data Storage
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

CNHTS:
8542329090
USHTS:
8542320071
ECCN:
EAR99

V-Family Low-Power F-RAM

Infineon Technologies V-Family low-power F-RAM devices feature high-performance nonvolatile memory employing an advanced ferroelectric process. Infineon serial F-RAM performs write operations at bus speed, incurs no write delays, and is ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. The V-Family parallel F-RAM provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM.