SCTWA70N120G2V-4
Images are for reference only
See Product Specifications
See Product Specifications
511-SCTWA70N120G2V-4
SCTWA70N120G2V-4
Mfr.:
Description:
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
Datasheet:
In Stock: 28
-
Stock:
-
28 Can Dispatch ImmediatelyAn unexpected error occurred. Please try again later.
-
Factory Lead Time:
-
17 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 28 will be subject to minimum order requirements.
Pricing (SGD)
| Qty. | Unit Price |
Ext. Price
|
|---|---|---|
| $41.02 | $41.02 | |
| $29.40 | $294.00 | |
| $28.77 | $2,877.00 | |
| 600 | Quote |
Similar Product
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
New Product:
New from this manufacturer.
- CAHTS:
- 8541290000
- USHTS:
- 8541290065
- JPHTS:
- 854129000
- TARIC:
- 8541290000
- MXHTS:
- 8541299900
- ECCN:
- EAR99
