It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

GCMX008C120S1-E1

Name: SemiQ GCMX008C120S1-E1
Brand: SemiQ
SKU: 148-GCMX008C120S1-E1
Price: 41.37 SGD
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

148-GCMX008C120S1-E1

Mfr. No:

GCMX008C120S1-E1

Mfr.:

SemiQ

Description:

MOSFET Modules Gen3 1200V 8mohm SiC MOSFET Module, SOT-227

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

GCMX008C120S1-E1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about SemiQ GCMX008C120S1-E1

Availability

Stock:: Non-Stocked

An unexpected error occurred. Please try again later.
Factory Lead Time:: 8 Weeks Estimated factory production time.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

This Product Ships FREE

Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$41.37	$1,241.10
	$36.18	$4,341.60
1,020	Quote

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	MOSFET Modules
RoHS:
Technology:	SiC
Mounting Style:	Screw Mount
Package/Case:	SOT-227-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	188 A
Rds On - Drain-Source Resistance:	12 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	536 W
Series:	GCMX
Packaging:	Tube
Brand:	SemiQ
Configuration:	Single
Fall Time:	28 ns
Height:	12.19 mm
Length:	38.1 mm
Product:	Power Modules
Product Type:	MOSFET Modules
Rise Time:	36 ns
Factory Pack Quantity:	30
Subcategory:	Discrete and Power Modules
Type:	MOSFET Power Module
Typical Turn-Off Delay Time:	89 ns
Typical Turn-On Delay Time:	35 ns
Vf - Forward Voltage:	3.8 V
Width:	25.3 mm

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

GCMX008C120S1-E1 Datasheet (PDF)

GEN3 1200V SiC MOSFET Power Modules

SemiQ GEN3 1200V SiC MOSFET Power Modules with an isolated backplate are based on third-generation SiC technology and tested at over 1400V. These come in two versions, the GCMX series and the GCMS series. Both of these highly rugged and easy-mount devices provide smaller die sizes, faster switching speeds, and reduced losses. The lineup includes an overall drain-source on-resistance [R_DS(on)] range from 8.4mΩ to 80mΩ with a switching time as low as 67ns. The COPACK MOSFETs (GCMS) with a Schottky barrier diode offer exceptional switching losses at a high junction temperature due to the low turn-on switching losses. The SemiQ GEN3 1200V SiC MOSFET Power Modules feature a continuous operational and storage temperature of -55°C to +175°C. Target applications include solar inverters, energy storage systems (ESS), battery charging, and server power supplies.