HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

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Description Datasheet Availability Pricing (SGD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Tradename
Packaging

IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 500V/25A
Datasheet
Non-Stocked Lead-Time 44 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 25 A 154 mOhms - 30 V, 30 V 3.5 V 93 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube

IXYS MOSFETs 600V 38A
Datasheet
Non-Stocked Lead-Time 39 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38 A 130 mOhms - 20 V, 20 V 2.5 V 330 nC - 55 C + 150 C 400 W Enhancement HiPerFET Tube

IXYS MOSFETs DIODE Id26 BVdass800
Datasheet
Non-Stocked Lead-Time 46 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 25 A 200 mOhms - 30 V, 30 V 5 V 200 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube

IXYS MOSFETs 600V 48A
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 32 A 150 mOhms - 30 V, 30 V 3 V 150 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube

IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 600V/32A
Datasheet
Non-Stocked Lead-Time 46 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 32 A 154 mOhms - 30 V, 30 V 140 nC 500 W HiPerFET Tube

IXYS MOSFETs 3.5 Amps 1000V 3 Rds
Datasheet
Non-Stocked Lead-Time 37 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 3.5 A 3 Ohms - 20 V, 20 V - 40 C + 150 C 80 W Enhancement HiPerFET Tube

IXYS MOSFETs HiPerFET Power MOSFETs
Datasheet
Non-Stocked
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 50 A 40 mOhms HiPerFET Tube

IXYS MOSFETs 500V 64A
Datasheet
Non-Stocked Lead-Time 35 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 35 A 95 mOhms - 30 V, 30 V 3 V 150 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube

IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 500V/45A
Datasheet
Non-Stocked Lead-Time 37 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 45 A 94 mOhms - 30 V, 30 V 3.5 V 145 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube

IXYS MOSFETs DIODE Id36 BVdass600
Datasheet
Non-Stocked Lead-Time 37 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 36 A 105 mOhms - 30 V, 30 V 3 V 200 nC - 55 C + 150 C 360 W Enhancement HiPerFET Tube

IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 600V/42A
Datasheet
Non-Stocked Lead-Time 46 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 42 A 104 mOhms - 30 V, 30 V 190 nC 568 W HiPerFET Tube

IXYS MOSFETs Polar3 HiPerFET Power MOSFET
Datasheet
Non-Stocked Lead-Time 44 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 600 V 48 A 76 mOhms - 30 V, 30 V 5 V 190 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltrJnctn X3Class TO-268AA
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 200 V 140 A 9.6 mOhms - 20 V, 20 V 2.5 V 127 nC - 55 C + 150 C 480 W Enhancement HiPerFET Tube
IXYS MOSFETs 14 Amps 800V 0.72 Rds
Datasheet
Non-Stocked Lead-Time 46 Weeks
Min.: 300
Mult.: 30
Si SMD/SMT TO-268-3 N-Channel 800 V 14 A 720 mOhms 400 W HiPerFET Tube
IXYS MOSFETs DiscMSFT NChTrenchGate-Gen2 TO-268AA
Datasheet
Non-Stocked Lead-Time 25 Weeks
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 175 V 150 A 9.7 mOhms - 20 V, 20 V 2.5 V 233 nC - 55 C + 175 C 880 W Enhancement HiPerFET Tube
IXYS MOSFETs Trench HiperFETs Power MOSFETs
Datasheet
Non-Stocked Lead-Time 25 Weeks
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 200 V 150 A 15 mOhms HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltrJnctn X3Class TO-268AA
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 250 V 150 A 9 mOhms - 10 V, 10 V 2.5 V 154 nC - 55 C + 150 C 735 W Enhancement HiPerFET Tube
IXYS MOSFETs MOSFET Discretes
Datasheet
Non-Stocked Lead-Time 37 Weeks
Min.: 400
Mult.: 400
Reel: 400

Si SMD/SMT TO-268-3 1 Channel 1 kV 15 A 1.05 Ohms - 30 V, 30 V 3.5 V 64 nC 690 W Enhancement HiPerFET Reel
IXYS MOSFETs 16 Amps 800V 0.6 Rds
Datasheet
Non-Stocked Lead-Time 46 Weeks
Min.: 300
Mult.: 30
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 800 V 16 A 600 mOhms - 30 V, 30 V - 55 C + 150 C 460 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltrJnctn X3Class TO-268AA
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 200 V 180 A 7.5 mOhms - 20 V, 20 V 2.5 V 154 nC - 55 C + 150 C 735 W Enhancement HiPerFET Tube
IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/18A
Datasheet
Non-Stocked Lead-Time 46 Weeks
Min.: 300
Mult.: 30
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 1 kV 18 A 660 mOhms - 30 V, 30 V 90 nC + 150 C 830 W HiPerFET Tube
IXYS MOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30
Si SMD/SMT TO-268-3 N-Channel 1 Channel 900 V 18 A 600 mOhms - 30 V, 30 V - 55 C + 150 C 540 W HiPerFET Tube
IXYS MOSFETs 20 Amps 1000V 1 Rds
Datasheet
Non-Stocked Lead-Time 37 Weeks
Min.: 300
Mult.: 30
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 1 kV 20 A 570 mOhms - 30 V, 30 V 6.5 V 126 nC - 55 C + 150 C 660 W Enhancement HiPerFET Tube
IXYS MOSFETs 20 Amps 800V 0.52 Rds
Datasheet
Non-Stocked
Min.: 1
Mult.: 1
Si SMD/SMT TO-268-3 N-Channel 1 Channel 800 V 20 A 520 mOhms - 30 V, 30 V 5 V 86 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube
IXYS MOSFETs 24 Amps 800V 0.4 Rds
Datasheet
Non-Stocked Lead-Time 46 Weeks
Min.: 300
Mult.: 30
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 800 V 24 A 400 mOhms - 30 V, 30 V 100 nC - 55 C + 150 C 650 W Enhancement HiPerFET Tube