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NTBL045N065SC1

Name: onsemi NTBL045N065SC1
Brand: onsemi
SKU: 863-NTBL045N065SC1
Price: 17.26 SGD
Availability: InStock

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Mouser No:

863-NTBL045N065SC1

Mfr. No:

NTBL045N065SC1

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS TOLL 650V

Datasheet:

NTBL045N065SC1 Datasheet

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More Information

Learn more about onsemi NTBL045N065SC1

In Stock: 1,374

Stock:: 1,374 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 1374 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$17.26	$17.26
	$10.95	$109.50
	$10.72	$1,072.00
	$10.01	$10,010.00
Full Reel (Order in multiples of 2000)
	$8.62	$17,240.00
4,000	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	SMD/SMT
Package/Case:	PSOF-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	73 A
Rds On - Drain-Source Resistance:	50 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	105 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	348 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Fall Time:	7 ns
Forward Transconductance - Min:	16 S
Packaging:	Reel
Packaging:	Cut Tape
Product Type:	SiC MOSFETS
Rise Time:	14 ns
Series:	NTBL045N065SC1
Factory Pack Quantity:	2000
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	26 ns
Typical Turn-On Delay Time:	13 ns

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Datasheet

NTBL045N065SC1 Datasheet

PCN

Material Composition Disclosure

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

650V Silicon Carbide (SiC) MOSFETs

onsemi 650V Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability compared to Silicon (Si). These 650V SiC MOSFETs have low ON resistance and a compact chip size to ensure low capacitance and gate charge. Benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

NTBL045N065SC1 33mohm Silicon Carbide MOSFET

onsemi NTBL045N065SC1 33mohm Silicon Carbide MOSFET is housed in a TOLL NTBL045N065SC1 package and designed to be fast and rugged. The devices offer a 10x higher dielectric breakdown field strength and 2x higher electron saturation velocity. The MOSFETs also offer a 3x higher energy band gap and 3x higher thermal conductivity. All onsemi SiC MOSFETs include AEC-Q101 qualified and PPAP-capable options specifically engineered and qualified for automotive and industrial applications.

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