NSVMSD1819A-RT1G

onsemi
863-NSVMSD1819A-RT1G
NSVMSD1819A-RT1G

Mfr.:

Description:
Bipolar Transistors - BJT SS SC70 GP XSTR NPN 50V

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 11,376

Stock:
11,376 Can Dispatch Immediately
Factory Lead Time:
31 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (SGD)

Qty. Unit Price
Ext. Price
$0.375 $0.38
$0.327 $3.27
$0.246 $24.60
$0.152 $76.00
$0.118 $118.00
Full Reel (Order in multiples of 3000)
$0.07 $210.00
$0.061 $366.00
$0.051 $459.00
$0.043 $1,032.00

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: Bipolar Transistors - BJT
RoHS:  
Si
SMD/SMT
SC-70-3
NPN
Single
200 mA
60 V
60 V
7 V
500 mV
150 mW
+ 150 C
MSD1819A-R
Reel
Cut Tape
Brand: onsemi
Continuous Collector Current: 100 mA
DC Current Gain hFE Max: 340
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

USHTS:
8541210095
TARIC:
8541210000
ECCN:
EAR99

MSD1819A-R General Purpose & Low VCE Transistor

onsemi MSD1819A-R General Purpose and Low VCE Transistor is designed for amplifier applications. This NPN transistor features a high current gain (hFE) from 210 to 460 and a low VCE <0.5V. The NPN transistor comes in the SC-70/SOT-323 package, designed for low-power surface mount applications. The silicon epitaxial planar transistor is AEC-Q101 qualified and PPAP capable. This low VCE transistor is Pb and halogen/BFR-free. Typical applications include reverse battery protection, DC-DC converter output driver, and high-speed switching.