IXFH60N65X2-4 & IXFH80N65X2-4 X2-Class MOSFETs

IXYS IXFH60N65X2-4 and IXFH80N65X2-4 X2-Class Discrete MOSFETs offer low drain-source resistance (38mΩ or 52mΩ) and low gate charge in an avalanche-rated international standard package. The IXYS IXFH60N65X2-4 and IXFH80N65X2-4 X2-Class Discrete MOSFETs also feature low package inductance and a 650V drain-source breakdown voltage. Applications include switch-mode and resonant-mode power supplies, DC-DC converters, and more.

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 Mfr.
Description Datasheet Availability Pricing (SGD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
IXYS MOSFETs 650V/80A TO-247-4L
Datasheet
509In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 80 A 38 mOhms - 30 V, 30 V 3.5 V 140 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/60A TO-247-4L
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 60 A 52 mOhms - 30 V, 30 V 3.5 V 108 nC - 55 C + 150 C 780 W Enhancement HiPerFET Tube