Results: 6
Select Image Part # Mfr. Description Datasheet Availability Pricing (SGD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Packaging

Infineon Technologies MOSFETs HIGH POWER_NEW 268In Stock
$12.48
$7.36
$6.20
$6.01
$5.66
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 36 A 60 mOhms 10 V 3.5 V 68 nC - 55 C + 150 C 171 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW 300In Stock
$13.57
$9.28
$7.66
$6.85
$6.45
Min.: 1
Mult.: 1
Si Through Hole N-Channel 1 Channel 650 V 50 A 41 mOhms 20 V 4.5 V 102 nC - 55 C + 150 C 227 W Enhancement Tube

Infineon Technologies MOSFETs HIGH POWER_NEW 126In Stock
$16.20
$11.04
$10.76
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 700 V 69 A 29 mOhms 20 V 4.5 V 145 nC - 55 C + 150 C 305 W Enhancement Tube

Infineon Technologies MOSFETs HIGH POWER_NEW 284In Stock
720On Order
$14.86
$8.09
$7.49
$7.45
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 700 V 68.5 A 41 mOhms 20 V 4 V 102 nC - 55 C + 150 C 500 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW 181In Stock
$20.48
$11.53
$11.33
Min.: 1
Mult.: 1
Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 69 A 29 mOhms 20 V 4.5 V 145 nC - 55 C + 150 C 305 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW 41In Stock
500Expected 10/12/2026
$11.03
$5.96
$5.47
$5.02
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 36 A 60 mOhms 10 V 4.5 V 68 nC - 55 C + 150 C 171 W Enhancement Tube