QPC1006

Qorvo
772-QPC1006
QPC1006

Mfr.:

Description:
RF Switch ICs 50W, 0.15-2.8GHz GaN SP3T

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about Qorvo QPC1006

Availability

Stock:
Non-Stocked
Factory Lead Time:
24 Weeks Estimated factory production time.
Minimum: 100   Multiples: 100
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (SGD)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 100)
$110.32 $11,032.00
200 Quote

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: RF Switch ICs
RoHS:  
SP3T
150 MHz
2.8 GHz
0.3 dB to 1 dB
30 dB
+ 275 C
SMD/SMT
QFN-24
GaN
QPC1006
Reel
Brand: Qorvo
Development Kit: QPC1006EVB
High Control Voltage: - 50 V
Moisture Sensitive: Yes
Number of Switches: Single
Operating Supply Current: 3 mA
Pd - Power Dissipation: 14 W
Product Type: RF Switch ICs
Factory Pack Quantity: 100
Subcategory: Wireless & RF Integrated Circuits
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

Models

PCN

This functionality requires JavaScript to be enabled.

CNHTS:
8542399000
USHTS:
9030820000
ECCN:
5A991.g

QPC1006 Single-Pole, Triple–Throw (SP3T) Switch

Qorvo QPC1006 Single-Pole, Triple–Throw (SP3T) Switch is fabricated on Qorvo’s QGaN25 0.25um GaN on SiC production process. Operating from 0.15 to 2.8GHz, the QPC1006 typically supports 50W input power handling at control voltages of 0/−40V for CW and pulsed RF operations. This switch maintains a low insertion loss of less than 1.0dB and greater than 30dB isolation, making it ideal for high-power switching applications across defense and commercial platforms. The Qorvo QPC1006 is offered in a 4mm x 4mm plastic overmolded QFN package.

TriQuint GaN Solutions

TriQuint leads the market in developing gallium nitride (GaN) products and processes. TriQuint's GaN technology supports RF requirements up to 40GHz with drain bias up to 48V. GaN-based solutions offer greater power density, efficiency, frequency range and ruggedness. These qualities enable RF systems to use less electricity, operate with less input voltage and deliver greater RF output power while reducing amplifier size and part counts. TriQuint GaN technology enables a wide range of MMIC amplifiers, discrete transistors and switches for commercial and defense applications. TriQuint is redefining what is possible, helping customers reach further while bringing designs to market faster than ever before. TriQuint narrowband amplifiers provide higher power with smaller form factors compared to previous generations. TriQuint wideband amplifiers and discrete transistors deliver record-setting power and efficiency levels. TriQuint switches support next-generation radar, electronic warfare (EW) and instrumentation systems with greater efficiency in smaller packages or as die-level components.
Learn More

GaN Switches

Qorvo Gallium Nitride (GaN) Switches are suited for RF Switching applications and feature high breakdown voltages combined with the low on-resistance and off-state capacitance. This enables a dramatic increases in power handling. GaAs FET switches are widely used in the RF industry, and typically used for power levels on the order of a few watts or less. GaN FETs are able to use the same circuit architectures to handle power levels on the order of tens of watts.

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.