SiC MOSFETs – Mouser Singapore

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650V 3rd Gen SiC MOSFETs

STMicroelectronics 650V 3rd Generation Silicon Carbide (SiC) MOSFETs feature low on-state resistance (R_DS(on)) per area, even at high temperatures, and excellent switching performance. This translates into more efficient and compact systems. The SiC MOSFETs feature excellent switching performance over IGBTs, simplifying the thermal design of power electronic systems. These 650V SiC MOSFETs have been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The low RDS(on), low capacitances, and high switching operations improve application performance in frequency, energy efficiency, system size, and weight reduction.

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Results: 11

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Part #

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package

SCT027H65G3AG
STMicroelectronics
1: $17.65
964In Stock
New Product

Mfr. Part No.
SCT027H65G3AG

Mouser Part No
511-SCT027H65G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package

Learn More

Datasheet

964In Stock

Cut Tape

$17.65

$12.34

$10.73

Reel

$10.02

Quote

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

650 V

60 A

39.3 mOhms

- 10 V, + 22 V

3 V

48.6 nC

- 55 C

+ 175 C

300 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package

SCT055TO65G3
STMicroelectronics
1: $11.86
1,764In Stock
New Product

Mfr. Part No.
SCT055TO65G3

Mouser Part No
511-SCT055TO65G3

New Product

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package

Learn More

Datasheet

1,764In Stock

Cut Tape

$11.86

$8.13

$7.17

$6.52

$5.96

Reel

$5.96

Min.: 1
Mult.: 1

: 1,800

SMD/SMT

TOLL-8

N-Channel

1 Channel

650 V

30 A

72 mOhms

- 10 V, + 22 V

3 V

31 nC

- 55 C

+ 175 C

234 W

Enhancement

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package

SCT040TO65G3
STMicroelectronics
1: $13.33
37In Stock
1,800Expected 13/7/2026
New Product

Mfr. Part No.
SCT040TO65G3

Mouser Part No
511-SCT040TO65G3

New Product

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package

Learn More

Datasheet

37In Stock

1,800Expected 13/7/2026

Cut Tape

$13.33

$10.04

$7.45

$7.42

$7.17

Reel

$6.95

Min.: 1
Mult.: 1

: 1,800

SMD/SMT

TOLL-8

N-Channel

1 Channel

650 V

35 A

63 mOhms

- 10 V, + 22 V

3 V

42.5 nC

- 55 C

+ 175 C

288 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package

SCT018H65G3AG
STMicroelectronics
1: $22.95
160In Stock

Mfr. Part No.
SCT018H65G3AG

Mouser Part No
511-SCT018H65G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package

Learn More

Datasheet

160In Stock

Cut Tape

$22.95

$16.25

$15.53

$13.84

Reel

$11.30

MouseReel Available

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

650 V

55 A

27 mOhms

- 18 V, + 18 V

4.2 V

79.4 nC

- 55 C

+ 175 C

385 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package

SCT018W65G3-4AG
STMicroelectronics
1: $25.72
505In Stock

Mfr. Part No.
SCT018W65G3-4AG

Mouser Part No
511-SCT018W65G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package

Learn More

Datasheet

505In Stock

$25.72

$19.68

$15.05

$13.72

$11.43

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

N-Channel

1 Channel

650 V

55 A

27 mOhms

- 18 V, + 18 V

4.2 V

77 nC

- 55 C

+ 200 C

398 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

SCT040W65G3-4
STMicroelectronics
1: $15.05
537In Stock

Mfr. Part No.
SCT040W65G3-4

Mouser Part No
511-SCT040W65G3-4

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

Learn More

Datasheet

537In Stock

$15.05

$9.01

$8.56

$8.16

Min.: 1
Mult.: 1

Through Hole

HiP247-4

N-Channel

1 Channel

650 V

30 A

63 mOhms

- 10 V, + 22 V

3 V

37.5 nC

- 55 C

+ 200 C

240 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

SCT040W65G3-4AG
STMicroelectronics
1: $17.43
481In Stock

Mfr. Part No.
SCT040W65G3-4AG

Mouser Part No
511-SCT040W65G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

Learn More

Datasheet

481In Stock

$17.43

$12.62

$10.33

$10.31

$9.83

Min.: 1
Mult.: 1

Through Hole

HiP247-4

N-Channel

1 Channel

650 V

30 A

63 mOhms

- 10 V, + 22 V

3 V

37.5 nC

- 55 C

+ 200 C

240 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

SCT055W65G3-4AG
STMicroelectronics
1: $20.59
30In Stock
600On Order

Mfr. Part No.
SCT055W65G3-4AG

Mouser Part No
511-SCT055W65G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

Learn More

Datasheet

30In Stock

600On Order

$20.59

$16.39

$14.87

$9.81

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

N-Channel

1 Channel

650 V

30 A

72 mOhms

- 18 V, + 18 V

4.2 V

32 nC

- 55 C

+ 200 C

210 W

Enhancement

AEC-Q100

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A

SCT040H65G3AG
STMicroelectronics
1: $15.73
879In Stock

Mfr. Part No.
SCT040H65G3AG

Mouser Part No
511-SCT040H65G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A

Learn More

Datasheet

879In Stock

Cut Tape

$15.73

$10.91

$9.22

Reel

$8.60

MouseReel Available

Min.: 1
Mult.: 1

: 1,000

SMD/SMT

N-Channel

1 Channel

650 V

30 A

40 mOhms

- 10 V, + 22 V

4.2 V

39.5 nC

- 55 C

+ 175 C

221 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24

SCTW90N65G2V
STMicroelectronics
1: $32.28
34In Stock
600Expected 7/5/2026

Mfr. Part No.
SCTW90N65G2V

Mouser Part No
511-SCTW90N65G2V

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24

Learn More

Datasheet

34In Stock

600Expected 7/5/2026

$32.28

$30.55

$28.12

Quote

Min.: 1
Mult.: 1

Through Hole

HiP-247-3

N-Channel

1 Channel

650 V

90 A

25 mOhms

- 10 V, + 22 V

1.9 V

157 nC

- 55 C

+ 200 C

390 W

Enhancement

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package

SCT018H65G3-7
STMicroelectronics
1,000: $10.59
Non-Stocked Lead-Time 21 Weeks
New Product

Mfr. Part No.
SCT018H65G3-7

Mouser Part No
511-SCT018H65G3-7

New Product

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package

Learn More

Datasheet

Non-Stocked Lead-Time 21 Weeks

Reel

$10.59

Min.: 1,000
Mult.: 1,000

: 1,000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

650 V

55 A

27 mOhms

-10 V, 22 V

4.2 V

79.4 nC

- 55 C

+ 175 C

385 W

Enhancement

650V 3rd Gen SiC MOSFETs

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