LMG2100R044RARR

Texas Instruments
595-LMG2100R044RARR
LMG2100R044RARR

Mfr.:

Description:
Gate Drivers 100-V 4.4-m? half-br idge GaN FET with i

Datasheet:
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In Stock: 31

Stock:
31
Can Dispatch Immediately
On Order:
5,000
Expected 16/7/2026
10,000
Expected 23/7/2026
Factory Lead Time:
12
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1   Maximum: 170
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (SGD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$13.80 $13.80
$9.45 $94.50
$7.13 $713.00
Full Reel (Order in multiples of 2500)
$7.13 $17,825.00
† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
SMD/SMT
VQFN-FCRLF-16
- 40 C
+ 125 C
LMG2100R044
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Moisture Sensitive: Yes
Product Type: Gate Drivers
Factory Pack Quantity: 2500
Subcategory: PMIC - Power Management ICs
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Attributes selected: 0

Datasheet

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Compliance Codes
CNHTS:
8542399000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Philippines
Assembly Country of Origin:
Philippines
Country of Diffusion:
United States
The country is subject to change at the time of shipment.

LMG2100R044 GaN Half-Bridge Power Stage

Texas Instruments LMG2100R044 GaN Half-Bridge Power Stage is a 90V continuous, 100V pulsed, 35A half-bridge power stage with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The LMG2100R044 combines two 100V GaN FETs driven by one high-frequency 90V GaN FET driver in a half-bridge configuration. The GaN FETs offer significant advantages for power conversion, such as zero reverse recovery and minimal input capacitance CISS and output capacitance COSS.

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