MMFTP3334K P-Channel Enhancement Mode FET

Diotec Semiconductor MMFTP3334K P-Channel Enhancement Mode FET offers fast switching times, high drain current (4A maximum), and low on-state resistance in a SOT-23 (TO-236) package. The MMFTP3334K FET features a 30V maximum drain-source voltage, 1000mW maximum power dissipation, and 5.9nC typical total gate charge in a -50°C to +150°C junction temperature range. The Diotec Semiconductor MMFTP6312D Dual P-Channel MOSFET is ideal for signal processing, drivers, and logic-level converters.

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Description Datasheet Availability Pricing (SGD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Tradename
Packaging
Diotec Semiconductor MOSFETs MOSFET, SOT-23, -30V, -4A, 150C, P
Datasheet
7,194In Stock
Min.: 1
Mult.: 1
Reel: 3,000

Si SOT-23 MMFTP3334K Reel, Cut Tape
Diotec Semiconductor MOSFETs MOSFET, SOT-23, -30V, -4A, 150C, P, AEC-Q101
Datasheet
5,867In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 3,000

Si SMD/SMT SOT-23 P-Channel 1 Channel 30 V 4 A 71 mOhms - 20 V, 20 V 1.4 V 5.9 nC - 55 C + 150 C 1 W Enhancement AEC-Q101 MMFTP3334K-AQ Reel, Cut Tape, MouseReel