TP65H035G4YS 650V SuperGaN® FET

Renesas Electronics TP65H035G4YS 650V SuperGaN® Field Effect Transistor (FET) is a 35mΩ gallium nitride (GaN) FET offered in a four-lead TO-247 package. This normally off-device uses Renesas Electronics's Gen IV platform and combines a high-voltage GaN HEMT with a low-voltage silicon MOSFET, resulting in superior reliability and performance. The Gen IV SuperGaN platform utilizes advanced epi and patented design technologies to simplify manufacturability. The platform also improves efficiency over silicon via lower gate charge, crossover loss, output capacitance, and reverse recovery charge. This four-lead TP65H035G4YS SuperGaN device can be used as an original design-in option or as a drop-in replacement for four-lead silicon and SiC solutions supporting power supplies at 1kW and up. Ideal applications for the Renesas Electronics 650V SuperGaN FET include datacom, industrial, PV inverters, and servo motors.