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BGA5H1BN6E6327XTSA1

Name: Infineon BGA5H1BN6E6327XTSA1
Brand: Infineon Technologies
SKU: 726-BGA5H1BN6E6327XT
Price: 0.82 SGD
Availability: InStock

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Mouser No:

726-BGA5H1BN6E6327XT

Mfr. No:

BGA5H1BN6E6327XTSA1

Mfr.:

Infineon Technologies

Description:

RF Amplifier RF MMIC SUB 3 GHZ

Datasheet:

BGA5H1BN6E6327XTSA1 Datasheet (PDF)

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In Stock: 6,368

Stock:: 6,368 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$0.82	$0.82
	$0.699	$6.99
	$0.66	$16.50
	$0.603	$60.30
	$0.57	$142.50
	$0.543	$271.50
	$0.488	$488.00
	$0.418	$1,672.00
	$0.377	$3,016.00
Full Reel (Order in multiples of 12000)
	$0.377	$4,524.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	RF Amplifier
RoHS:
Operating Frequency:	2.3 GHz to 2.69 GHz
Operating Supply Voltage:	1.5 V to 3.6 V
Operating Supply Current:	8.5 mA
Gain:	18 dB
NF - Noise Figure:	0.7 dB
Type:	Low Noise Amplifiers
Mounting Style:	SMD/SMT
Package/Case:	TSNP-6
Technology:	SiGe
P1dB - Compression Point:	- 16 dBm
OIP3 - Third Order Intercept:	- 6 dBm
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Input Return Loss:	10 dB
Isolation dB:	36 dB
Number of Channels:	1 Channel
Pd - Power Dissipation:	60 mW
Product Type:	RF Amplifier
Factory Pack Quantity:	12000
Subcategory:	Wireless & RF Integrated Circuits
Test Frequency:	2.5 GHz
Part # Aliases:	BGA 5H1BN6 E6327 SP001777994
Unit Weight:	0.830 mg

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Datasheet

BGA5H1BN6E6327XTSA1 Datasheet (PDF)

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Infineon's Latest Power and Sensing Guide (PDF)

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CNHTS:: 8542339000
CAHTS:: 8542330000
USHTS:: 8542330001
TARIC:: 8542330000
MXHTS:: 8542330201
ECCN:: EAR99

BGA5x1BN6 Low-noise Amplifiers

Infineon Technologies BGA5x1BN6 Amplifier product family includes +18dBm high-gain, low-noise amplifiers that cover the low (600-1000MHz) mid (1805-2200MHz), and high-band (2300-2690MHz) frequency ranges. Based on Infineon Technologies‘ B9HF Silicon Germanium technology, the BGA5x1BN6 Amplifiers operate from a 1.5V to 3.6V supply voltage and offer single-line two-state control. The amplifiers provide excellent low-noise performance and competitive insertion-loss levels. Designers can easily enable BGA5x1BN6's off-state mode by powering down the V_CC. Available in an ultra-small leadless package measuring only 0.7 x 1.1mm², the BGA5x1BN6 Amplifiers are ideal for smartphones running on the LTE or GSM network.

Low Noise Amplifier (LNA) ICs

Infineon Technologies Low Noise Amplifier (LNA) ICs boost data rates and reception quality of wireless applications by utilizing a very low-power signal without significant signal-to-noise ratio degradation. The improved receiver sensitivity enhances user experiences and satisfies market requirements. These highly integrated, small-packaged devices come with ESD protection and low power consumption, which is ideal for battery-operated mobile devices. Users of 4G/5G, GPS, Mobile TV, Wi-Fi, and FM portable devices will enjoy high data-rate reception, fast/precise navigation, and smooth, high-quality streaming even in the worst reception conditions.