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RD3S100AAFRATL

Name: ROHM Semiconductor RD3S100AAFRATL
Brand: ROHM Semiconductor
SKU: 755-RD3S100AAFRATL
Price: 5.06 SGD
Availability: InStock

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Mouser No:

755-RD3S100AAFRATL

Mfr. No:

RD3S100AAFRATL

Mfr.:

ROHM Semiconductor

Description:

MOSFETs Transistor, MOSFET Nch, 190V(Vdss), 10.0A(Id), (10V Drive)

Datasheet:

RD3S100AAFRATL Datasheet

ECAD Model:

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Learn more about ROHM Semiconductor RD3S100AAFRATL

In Stock: 2,856

Stock:: 2,856 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$5.06	$5.06
	$3.32	$33.20
	$2.32	$232.00
	$2.03	$1,015.00
	$1.86	$1,860.00
Full Reel (Order in multiples of 2500)
	$1.71	$4,275.00
	$1.65	$8,250.00
25,000	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-252-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	190 V
Id - Continuous Drain Current:	10 A
Rds On - Drain-Source Resistance:	182 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	52 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	85 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	75 ns
Forward Transconductance - Min:	6 S
Product Type:	MOSFETs
Rise Time:	20 ns
Series:	RD3
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	140 ns
Typical Turn-On Delay Time:	15 ns
Part # Aliases:	RD3S100AAFRA
Unit Weight:	330 mg

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Attributes selected: 0

                        
ROHM Semiconductors AEC-Q101 qualified products are not 
intended for volume automotive production without ROHM 
Semiconductors prior approval. 

Please contact ROHM Semiconductor for Production Part Approval 
Process (PPAP) requirements or contact a Mouser Technical Sales 
Representative for further assistance. 

5-0617-50

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Datasheet

RD3S100AAFRATL Datasheet

Specification Sheets

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

AEC-Q101 Automotive MOSFETs

ROHM Semiconductor AEC-Q101 Automotive MOSFETs provide wide drive type and support from a small signal to high power. These ROHM Semiconductor MOSFETs are available in a wide range of microminiature packages and help reduce the board space. The AEC-Q101 MOSFETs are automotive-supported products and are based on standard AEC-Q101. These MOSFETs offer high-speed switching and low on-resistance. The AEC-Q101 MOSFETs are available in single and dual polarities and provide a drain-source voltage ranging from -100V_DSS to 100V_DSS. These MOSFETs offer a drain-current ranging from -25A to 40A and R_DS(on) ranging from 0.004Ω to 3Ω (typical). The AEC-Q101 MOSFETs provide a total gate charge of 2nC to 80nC.

N-Channel SiC Power MOSFETs

ROHM Semiconductor N-Channel Silicon Carbide (SiC) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. Their low ON resistance and compact chip size ensure low capacitance and gate charge. These ROHM SiC Power MOSFETs exhibit minimal ON-resistance increases and provides greater package miniaturization. This provides more energy savings than standard Si devices, in which the ON-resistance can more than double with increased temperature.

Silicon Power MOSFETs

ROHM Semiconductor Silicon Power MOSFETs feature ultra-fast switching speeds and low on-resistance. These MOSFETs are available in a wide lineup of packages, including the miniature 0604 size to save space in various designs.

Automotive Solutions

ROHM Automotive Solutions contribute to the continuing evolution of the automotive sector through a stable, long-term supply of high-quality products. An expansive lineup supports the transition towards increased electrification and connectivity. ROHM can provide optimized solutions to suit various customer needs by focusing on safety, comfort, and the environment.

RD3S100AAFRA N-Ch 190V 10A Power MOSFET

ROHM Semiconductor RD3S100AAFRA N-Ch 190V 10A Power MOSFET features a low on-resistance and fast switching speed. The RD3S100AAFRA MOSFET is can easily be set up for parallel use. The ROHM RD3S100AAFRA Power MOSFET is designed for switching power supply applications.

RD3x Automotive N-Channel Power MOSFETs

ROHM Semiconductor RD3x Automotive N-Channel Power MOSFETs are high-performance switching and rectifier devices designed for use in a wide range of power and signal applications. The AEC-Q101-qualified ROHM RD3x components feature low forward voltage, fast recovery time, and high surge current capability, making the MOSFETs ideal for efficient power conversion and protection in compact electronic systems. With options tailored for automotive, industrial, and consumer electronics, the RD3 family supports applications such as DC-DC converters, motor drivers, LED lighting, and battery-powered devices. A compact surface-mount (TO-252-3) package and low leakage current contribute to space-saving and energy-efficient designs, while high reliability ensures stable performance under demanding conditions.