T1GA26xx-SM Low Noise Amplifiers

Qorvo TGA26xx-SM Low Noise Amplifiers are fabricated on a 0.25um GaN on SiC process (TQGaN25). Covering 2GHz to 6GHz, the TGA26xx-SM Amplifiers typically provides >22dB small signal gain and 30dBm of OTOI with 1.0dB NF. In addition to the high electrical performance, this GaN amplifier also provides a high level of input power robustness. Able to survive a high level of input power without performance degradation, Qorvo TGA26xx-SM provides flexibility regarding receive chain protection, resulting in reduced board space. This device is ideal for radar and satellite communication applications.

Results: 2
Select Image Part # Mfr. Description Datasheet Availability Pricing (SGD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Operating Frequency Operating Supply Voltage Operating Supply Current Gain Type Mounting Style Package/Case Technology P1dB - Compression Point Minimum Operating Temperature Maximum Operating Temperature Series Packaging
Qorvo RF Amplifier 9-10GHz 20W GaN PAE>40% SSG >34dB
700Expected 10/4/2026
Min.: 1
Mult.: 1
Reel: 250

9 GHz to 10 GHz 20 V to 32 V 365 mA 34 dB Power Amplifiers SMD/SMT QFN-22 GaN SiC - 40 C + 85 C TGA2624 Reel, Cut Tape
Qorvo RF Amplifier 9-10GHz 35W GaN PAE >42% SSG >30dB
N/A
Min.: 1
Mult.: 1

9 GHz to 10 GHz 28 V 290 mA 32.7 dB Power Amplifiers SMD/SMT QFN-22 GaN SiC 40 dBm - 40 C + 85 C TGA2622 Waffle