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STD65N160M9

Name: STMicroelectronics STD65N160M9
Brand: STMicroelectronics
SKU: 511-STD65N160M9
Price: 4.71 SGD
Availability: InStock

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Mouser No:

511-STD65N160M9

Mfr. No:

STD65N160M9

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 650 V, 132 mOhm typ., 17 A MDmesh M9 Power MOSFET

Complete Your Design

Datasheet:

STD65N160M9 Datasheet (PDF)

ECAD Model:

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In Stock: 783

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 2500)

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$4.71	$4.71
	$3.32	$33.20
	$2.34	$234.00
	$2.04	$1,020.00
Full Reel (Order in multiples of 2500)
	$1.65	$4,125.00

† A MouseReel™ fee of $10.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	17 A
Rds On - Drain-Source Resistance:	160 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4.2 V
Qg - Gate Charge:	32 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	106 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Fall Time:	7 ns
Product Type:	MOSFETs
Rise Time:	4 ns
Series:	MDmesh M9
Factory Pack Quantity:	2500
Subcategory:	Transistors
Unit Weight:	330 mg

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Datasheet

STD65N160M9 Datasheet (PDF)

Other

Super-junction Power MOSFETs for best efficiency (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

STD65N160M9 N-channel Power MOSFET

STMicroelectronics STD65N160M9 N-channel Power MOSFET is based on super-junction MDmesh M9 technology. The MOSFET is suitable for medium/high voltage featuring very low R_DS(on) per area. The silicon-based M9 technology benefits from a multi-drain manufacturing process, allowing for an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values among all silicon-based fast-switching super-junction Power MOSFETs. This makes it particularly suitable for applications that require superior power density and outstanding efficiency.

MDmesh™ M9 Power MOSFETs

STMicroelectronics MDmesh™ M9 Power MOSFETs feature enhanced device structure, low ON resistance, and low gate charge values. These power MOSFETs offer high reverse diode dv/dt and MOSFET dv/dt ruggedness, high power density, and low conduction losses. The MDmesh M9 Power MOSFETs also offer high switching speed, high efficiency, and low switching power losses. These power MOSFETs are designed with innovative high-voltage super-junction technology that delivers impressive Figure of Merit ((FoM). The high FoM enables higher power levels and density for more compact solutions. Typical applications include servers, telecom data centers, 5G power stations, microinverters, and fast chargers.