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IPDQ60R010S7AXTMA1

Name: Infineon IPDQ60R010S7AXTMA1
Brand: Infineon Technologies
SKU: 726-DQ60R010S7AXTMA1
Price: 35.52 SGD
Availability: InStock

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Mouser No:

726-DQ60R010S7AXTMA1

Mfr. No:

IPDQ60R010S7AXTMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs AUTOMOTIVE_COOLMOS

Datasheet:

IPDQ60R010S7AXTMA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies IPDQ60R010S7AXTMA1

In Stock: 2

Stock:: 2

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On Order:: 750

Expected 23/7/2026

750

Expected 6/8/2026
Factory Lead Time:: 23

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

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Ext. Price:

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$35.52	$35.52
	$27.62	$276.20
	$24.26	$2,426.00
	$23.19	$11,595.00
Full Reel (Order in multiples of 750)
	$20.98	$15,735.00
2,250	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	50 A
Rds On - Drain-Source Resistance:	10 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	318 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	694 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Product Type:	MOSFETs
Factory Pack Quantity:	750
Subcategory:	Transistors
Part # Aliases:	IPDQ60R010S7A SP002063384

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Datasheet

IPDQ60R010S7AXTMA1 Datasheet (PDF)

Product Catalogs

Infineon's Latest Power and Sensing Guide (PDF)

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Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: Germany
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Germany

The country is subject to change at the time of shipment.

600V CoolMOS™ SJ S7A Power Device

Infineon Technologies 600V CoolMOS™ SJ S7A Power Device is a high voltage power MOSFET, designed as a static switch. The device was designed according to the Infineon Technologies' super-junction (SJ) principle. It combines the experience of the leading SJ MOSFET supplier with high-class innovation for low R_DS(on) in a QDPAK package. The S7A series is optimized for low-frequency switching and high current applications like circuit breakers.