It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

NTMT045N065SC1

Name: onsemi NTMT045N065SC1
Brand: onsemi
SKU: 863-NTMT045N065SC1
Price: 16.68 SGD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

863-NTMT045N065SC1

Mfr. No:

NTMT045N065SC1

Mfr.:

onsemi

Description:

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, Power88

Datasheet:

NTMT045N065SC1 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi NTMT045N065SC1

In Stock: 5,875

Stock:: 5,875 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 5875 will be subject to minimum order requirements.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$16.68	$16.68
	$12.15	$121.50
	$10.52	$1,052.00
	$9.65	$9,650.00
Full Reel (Order in multiples of 3000)
	$8.59	$25,770.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	SMD/SMT
Package/Case:	TDFN-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	55 A
Rds On - Drain-Source Resistance:	50 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	105 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	187 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Fall Time:	7 ns
Forward Transconductance - Min:	16 S
Packaging:	Reel
Packaging:	Cut Tape
Product Type:	SiC MOSFETS
Rise Time:	14 ns
Series:	NTMT045N065SC1
Factory Pack Quantity:	3000
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	26 ns
Typical Turn-On Delay Time:	13 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

NTMT045N065SC1 Datasheet

Material Composition Disclosure

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low R_DS(on), and high short circuit withstand time (SCWT).

NTMT045N065SC1 Silicon Carbide (SiC) MOSFETs

onsemi NTMT045N065SC1 Silicon Carbide (SiC) MOSFETs use technology that provides superior switching performance and higher reliability compared to Silicon. The onsemi MOSFETs feature low ON resistance and a compact chip size that ensures low capacitance and gate charge. The devices have benefits that include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.