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NDSH20120CDN

Name: onsemi NDSH20120CDN
Brand: onsemi
SKU: 863-NDSH20120CDN
Price: 13.34 SGD
Availability: InStock

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Mouser No:

863-NDSH20120CDN

Mfr. No:

NDSH20120CDN

Mfr.:

onsemi

Description:

SiC Schottky Diodes SIC DIODE GEN2.0 1200V TO

Datasheet:

NDSH20120CDN Datasheet

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In Stock: 400

Stock:: 400 Can Dispatch Immediately

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Factory Lead Time:: 13 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (SGD)

Qty.	Unit Price	Ext. Price
	$13.34	$13.34
	$8.02	$80.20
	$8.01	$801.00
	$7.20	$3,240.00
	$6.99	$6,291.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC Schottky Diodes
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Configuration:	Dual Anode Common Cathode
If - Forward Current:	24 A
Vrrm - Repetitive Reverse Voltage:	1.2 kV
Vf - Forward Voltage:	1.75 V
Ifsm - Forward Surge Current:	59 A
Ir - Reverse Current:	1 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	NDSH20120CDN
Packaging:	Tube
Brand:	onsemi
Pd - Power Dissipation:	94 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	450
Subcategory:	Diodes & Rectifiers
Tradename:	EliteSiC
Vr - Reverse Voltage:	1.2 kV

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Datasheet

NDSH20120CDN Datasheet

CAHTS:: 8541100090
USHTS:: 8541100080
TARIC:: 8541100000
ECCN:: EAR99

D3 EliteSiC Diodes

onsemi D3 EliteSiC Diodes are a solution for applications requiring high-power PFC and output rectification. The onsemi D3 has a maximum voltage rating of 1200V. These diodes come in two package options, TO-247-2LD and TO-247-3LD, providing flexibility for various designs. The D3 EliteSiC Diodes are optimized for high-temperature operation with low series-resistance temperature dependency, ensuring consistent and reliable performance even under extreme conditions.

NDSH20120CDN Silicon Carbide (SiC) Schottky Diode

onsemi NDSH20120CDN Silicon Carbide (SiC) Schottky Diode provides superior switching performance and higher reliability compared to Silicon. The TO-247-3LD packaged NDSH20120CDN features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. This EliteSiC diode offers a positive temperature coefficient and ease of paralleling.