NXH600B100H4Q2F2S1G

Name: onsemi NXH600B100H4Q2F2S1G
Brand: onsemi
SKU: 863-600B100H4Q2F2S1G
Price: 294.2 SGD
Availability: InStock

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Mouser No:

863-600B100H4Q2F2S1G

Mfr. No:

NXH600B100H4Q2F2S1G

Mfr.:

onsemi

Description:

IGBT Modules FLYING CAP 3CHANNEL Q2BOOST WITH IN-HOUSE DIE

Datasheet:

NXH600B100H4Q2F2S1G Datasheet

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	IGBT Modules
Product:	Si/SiC Hybrid Modules
Configuration:	Triple
Collector- Emitter Voltage VCEO Max:	1 kV
Collector-Emitter Saturation Voltage:	1.88 V
Continuous Collector Current at 25 C:	173 A
Gate-Emitter Leakage Current:	350 nA
Pd - Power Dissipation:	422 W
Package/Case:	PIM-56
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tray
Brand:	onsemi
Maximum Gate Emitter Voltage:	20 V
Mounting Style:	Screw Mount
Product Type:	IGBT Modules
Series:	NXH600B100H4Q2F2S1G
Factory Pack Quantity:	36
Subcategory:	IGBTs
Technology:	SiC, Si
Tradename:	EliteSiC

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Datasheet

NXH600B100H4Q2F2S1G Datasheet

PCN

Material Composition Disclosure

Compliance Codes

USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Czech Republic

The country is subject to change at the time of shipment.